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T580N06TOFXPSA1
P1-P3
P4-P6
P7-P9
P10-P10
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T580N
IFBIP D AEC / 2009-11-30, H.Sandmann
A
27/09
7/10
Seite/page
Tc
DC
180
°
12
0°
90°
60°
θ
=
3
0
°
0
10
0
20
0
30
0
40
0
50
0
60
0
70
0
80
0
90
0
0
100
2
00
300
40
0
5
00
60
0
7
00
I
TAV
[A
]
P
TA
V
[W
]
0°
0
18
0°
Durchlassverlustleistung /
On-state power loss
P
TA
V
= f(I
TAV
)
Rechteckförmiger Strom / Rectangular current
Parameter: Stromflusswinkel
Θ
/ Current conduction angle
Θ
DC
180
°
12
0°
90°
60
°
θ
=
3
0
°
20
40
60
80
100
120
140
0
100
200
3
00
4
00
5
00
60
0
70
0
I
TA
V
[A
]
T
C
[°
C
]
0°
0
180°
Höchstzulässige Geh
äusetemperatur / Maximum allow
able case temperature T
C
= f(I
TAV
)
Rechteckförmiger Strom / Rectangular current
Beidseitige Kühlung / T
wo-sided cooling
Parameter: Stromflusswinkel
Θ
/ Current conduction angle
Θ
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T580N
IFBIP D AEC / 2009-11-30, H.Sandmann
A
27/09
8/10
Seite/page
Steuerkennlinie
Zündverzug
0,1
1
10
100
1
10
100
1000
10000
100000
i
G
[mA
]
v
G
[V]
Tvj max =
+140°C
T
vj
=
-40°C
a
b
c
d
T
vj
=
+25°C
Steuercharakteristik v
G
= f (i
G
) mit Zündbereichen für V
D
= 12 V
Gate characteristic v
G
= f (i
G
) with triggering area for V
D
= 12 V
Höchstzulässige Spitzens
teuerverlustleistung / Maximum rat
ed peak gate power dissipation P
GM
= f (t
g
) :
a - 40W / 10ms b - 80W / 1ms c - 100W / 0,5ms d – 150W / 0,1ms
100
1000
10000
1
10
100
-di/dt [A
/µ
s]
Q
r
[µAs
]
i
TM
= 1000A
10A
20A
50
A
100A
200
A
500
A
Sperrverzögerungsla
dung / Recovered charge Q
r
= f(di/dt)
T
vj
= T
vjmax
, v
R
≤
0,5 V
RRM
, V
RM
= 0,8 V
RRM
Parameter: Durchlassstro
m / On-state current i
TM
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T580N
IFBIP D AEC / 2009-11-30, H.Sandmann
A
27/09
9/10
Seite/page
0-
50V
0,33 VRR
M
0,67 V
R
RM
0
1
2
3
4
5
6
1
2
3
4
5
6
7
8
9
1
0
1
11
21
31
4
1
51
61
7
A
nzahl Pulse b
ei 50Hz
Sinu
s H
albwellen
N
um
b
er o
f
p
u
lses f
o
r 50Hz
sin
u
so
id
al h
alf
w
aves
I
T(
OV
)M
[k
A]
Typische Abhängi
gkeit des Grenzstromes I
T(OV)M
von der Anza
hl für eine Folge v
on
Sinus
Halbwellen bei 50H
z. Parameter: Rück
wärtsspannung V
RM
Typical depende
ncy of maximum ov
erload on-state current I
T(OV)M
as a number of a s
equence of
sinusoidal half waves at 50Hz. Parameter:
peak reverse voltage V
RM
I
T(OV)M
= f (pulses
, V
RM
) ; T
vj
= T
vjmax
P1-P3
P4-P6
P7-P9
P10-P10
T580N06TOFXPSA1
Mfr. #:
Buy T580N06TOFXPSA1
Manufacturer:
Infineon Technologies
Description:
SCR MODULE 600V 800A DO200AA
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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