BC858CDW1T1G Datasheet BC858CDW1T1G, BC857CDW1T1, BC856BDW1T1 | P1-P3

November, 2005 − Rev. 6

1 Publication Order Number:

BC856BDW1T1/D

BC856BDW1T1,

BC857BDW1T1 Series,

BC858CDW1T1 Series

Preferred Devices

Dual General Purpose

Transistors

PNP Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−363/SC−88 which is

designed for low power surface mount applications.

Features

• Pb−Free Packages are Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

BC856

BC857

BC858

V

CEO

−65

−45

−30

V

Collector−Base Voltage

BC856

BC857

BC858

V

CBO

−80

−50

−30

V

Emitter−Base Voltage V

EBO

−5.0 V

Collector Current −Continuous I

C

−100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation Per Device

FR−5 Board (Note 1)

T

A

= 25°C

Derate Above 25°C

P

D

380

250

3.0

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

R

q

JA

328 °C/W

Junction and Storage Temperature

Range

T

J

, T

stg

−55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in

SOT−363/SC−88

CASE 419B

STYLE 1

MARKING DIAGRAM

Preferred devices are recommended choices for future use

and best overall value.

Q

1

(1)(2)

(3)

(4) (5) (6)

Q

2

http://onsemi.com

1

3x M G

G

See detailed ordering and shipping information in the packag

e

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

3x = Specific Device Code

x = B, F, G, or L

(See Ordering Information)

M = Date Code

G = Pb−Free Package

(Note: Microdot may be in either location)

BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series

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2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= −10 mA) BC856 Series

BC857 Series

BC858 Series

V

(BR)CEO

−65

−45

−30

−

V

Collector−Emitter Breakdown Voltage

(I

C

= −10 mA, V

EB

= 0) BC856 Series

BC857B Only

BC858 Series

V

(BR)CES

−80

−50

−30

−

V

Collector−Base Breakdown Voltage

(I

C

= −10 mA) BC856 Series

BC857 Series

BC858 Series

V

(BR)CBO

−80

−50

−30

−

V

Emitter−Base Breakdown Voltage

(I

E

= −1.0 mA) BC856 Series

BC857 Series

BC858 Series

V

(BR)EBO

−5.0

−

V

Collector Cutoff Current (V

CB

= −30 V)

Collector Cutoff Current (V

CB

= −30 V, T

A

= 150°C)

I

CBO

−

−15

−4.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(I

C

= −10 mA, V

CE

= −5.0 V) BC856B, BC857B

BC857C, BC858C

(I

C

= −2.0 mA, V

CE

= −5.0 V) BC856B, BC857B

BC857C, BC858C

h

FE

−

220

420

150

270

290

520

−

475

800

−

Collector−Emitter Saturation Voltage

(I

C

= −10 mA, I

B

= −0.5 mA)

(I

C

= −100 mA, I

B

= −5.0 mA)

V

CE(sat)

−

−0.3

−0.65

V

Base−Emitter Saturation Voltage

(I

C

= −10 mA, I

B

= −0.5 mA)

(I

C

= −100 mA, I

B

= −5.0 mA)

V

BE(sat)

−

−0.7

−0.9

−

V

Base−Emitter On Voltage

(I

C

= −2.0 mA, V

CE

= −5.0 V)

(I

C

= −10 mA, V

CE

= −5.0 V)

V

BE(on)

−0.6

−

−0.75

−0.82

V

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= −10 mA, V

CE

= −5.0 Vdc, f = 100 MHz)

f

T

100 − − MHz

Output Capacitance

(V

CB

= −10 V, f = 1.0 MHz)

C

ob

− − 4.5 pF

Noise Figure

(I

C

= −0.2 mA, V

CE

= −5.0 Vdc, R

S

= 2.0 kW,

f = 1.0 kHz, BW = 200 Hz)

NF − − 10 dB

BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series

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3

TYPICAL CHARACTERISTICS − BC856

Figure 1. DC Current Gain

I

C

, COLLECTOR CURRENT (mA)

Figure 2. “On” Voltage

I

C

, COLLECTOR CURRENT (mA)

−0.8

−1.0

−0.6

−0.2

−0.4

1.0

2.0

−0.1 −1.0

−10 −200

−0.2

0.2

0.5

−0.2 −1.0

−10 −200

T

J

= 25°C

V

BE(sat)

@ I

C

/I

B

= 10

V

CE(sat)

@ I

C

/I

B

= 10

V

BE

@ V

CE

= −5.0 V

Figure 3. Collector Saturation Region

I

B

, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

I

C

, COLLECTOR CURRENT (mA)

−1.0

−1.2

−1.6

−2.0

−0.02 −1.0

−10

0

−20

−0.1

−0.4

−0.8

V

CE

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

VB

, TEMPERATURE COEFFICIENT (mV/ C)°θ

−0.2 −2.0

−10 −200

−1.0

T

J

= 25°C

I

C

=

−10 mA

h

FE

, DC CURRENT GAIN (NORMALIZED)

V, VOLTAGE (VOLTS)

V

CE

= −5.0 V

T

A

= 25°C

0

−0.5 −2.0 −5.0

−20 −50 −100

−0.05 −0.2 −0.5 −2.0 −5.0

−100 mA

−20 mA

−1.4

−1.8

−2.2

−2.6

−3.0

−0.5 −5.0 −20

−50 −100

−55°C to 125°C

q

VB

for V

BE

−2.0

−5.0

−20

−50

−100

Figure 5. Capacitance

V

R

, REVERSE VOLTAGE (VOLTS)

40

Figure 6. Current−Gain − Bandwidth Product

I

C

, COLLECTOR CURRENT (mA)

−0.1 −0.2 −1.0 −50

2.0

−2.0 −10

−100

100

200

500

50

20

10

6.0

4.0

−1.0 −10

−100

V

CE

= −5.0 V

C, CAPACITANCE (pF)

f, CURRENT−GAIN − BANDWIDTH PRODUCT

T

−0.5 −5.0 −20

T

J

= 25°C

C

ob

C

ib

8.0

−50 mA

−200 mA

BC858CDW1T1G

BC858CDW1T1G

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