OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BCM846BSX

P1-P3P4-P6P7-P9P10-P12P13-P13
NXP Semiconductors
BCM846BS
NPN/NPN matched double transistor
BCM846BS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 June 2015 3 / 12
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - 80 V
V
CEO
collector-emitter voltage open base - 65 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse; t
p
≤ 1 ms - 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 200 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 300 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 625 K/W
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 416 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
NXP Semiconductors
BCM846BS
NPN/NPN matched double transistor
BCM846BS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 June 2015 4 / 12
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
CB
= 30 V; I
E
= 0 A; T
amb
= 25 °C - - 15 nAI
CBO
collector-base cut-off
current
V
CB
= 30 V; I
E
= 0 A; T
j
= 150 °C - - 5 µA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C - - 100 nA
V
CE
= 5 V; I
C
= 2 mA; T
amb
= 25 °C 200 290 450h
FE
DC current gain
V
CE
= 5 V; I
C
= 10 µA; T
amb
= 25 °C - 250 -
I
C
= 10 mA; I
B
= 0.5 mA; T
amb
= 25 °C - 50 200 mVV
CEsat
collector-emitter
saturation voltage
- 200 400 mVI
C
= 100 mA; I
B
= 5 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
[1] - 910 - mVV
BEsat
base-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA; T
amb
= 25 °C [1] - 760 - mV
V
BE
base-emitter voltage V
CE
= 5 V; I
C
= 10 mA; T
amb
= 25 °C [2] - - 770 mV
V
BE
base-emitter voltage V
CE
= 5 V; I
C
= 2 mA; T
amb
= 25 °C [2] 610 660 710 mV
C
C
collector capacitance V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 1.5 pF
C
E
emitter capacitance V
EB
= 0.5 V; I
C
= 0 A; i
c
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 11 - pF
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz;
T
amb
= 25 °C
100 250 - MHz
V
CE
= 5 V; I
C
= 0.2 mA; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz; T
amb
= 25 °C
- 3.3 - dBNF noise figure
V
CE
= 5 V; I
C
= 0.2 mA; R
S
= 2 kΩ;
T
amb
= 25 °C; f = 10 Hz to 15.7 kHz
- 2.8 - dB
Per device
h
FE1
/h
FE2
h
FE
matching [3] 0.9 1 -
V
BE1
−V
BE2
V
BE
matching
V
CE
= 5 V; I
C
= 2 mA; T
amb
= 25 °C
[4] - - 2 mV
[1] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[2] V
BE
decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as numerator.
[4] The smaller of the two values is subtracted from the larger value.
NXP Semiconductors
BCM846BS
NPN/NPN matched double transistor
BCM846BS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 June 2015 5 / 12
006aaa533
200
400
600
h
FE
0
I
C
(mA)
10
- 2
10
3
10
2
10
- 1
101
(3)
(1)
(2)
V
CE
= 5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 1. DC current gain as a function of collector
current; typical values
006aaa532
V
CE
(V)
0 1084 62
0.08
0.12
0.04
0.16
0.20
I
C
(A)
0
I
B
(mA) = 4.50
2.70
3.15
4.05
3.60
0.45
0.90
1.35
1.80
2.25
T
amb
= 25 °C
Fig. 2. Collector current as a function of collector-
emitter voltage; typical values
006aaa536
0.6
0.8
1
V
BE
(V)
0.4
I
C
(mA)
10
- 1
10
3
10
2
1 10
V
CE
= 5 V; T
amb
= 25 °C
Fig. 3. Base-emitter voltage as a function of collector
current; typical values
006aaa534
I
C
(mA)
10
- 1
10
3
10
2
1 10
0.5
0.9
1.3
0.3
0.7
1.1
V
BEsat
(V)
0.1
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 4. Base-emitter saturation voltage as a function of
collector current; typical values
P1-P3P4-P6P7-P9P10-P12P13-P13

BCM846BSX

Mfr. #:
Buy BCM846BSX
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN/NPN Matched Double Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet