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BSS84DW-7-F

P1-P3P4-P5
BSS84DW
Document number: DS30204 Rev. 18 - 2
1 of 5
www.diodes.com
January 2014
© Diodes Incorporated
BSS84DW
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
-50V
10 @ V
GS
= -5V
-130mA
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Compliance Case Packaging
BSS84DW-7-F Standard SOT363 3,000/Tape & Reel
BSS84DWQ-13 Automotive SOT363 10,000/Tape & Reel
BSS84DWQ-7 Automotive SOT363 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View
Top View
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
K84 YM
K84 YM
e3
K84 YM
K84 YM
K84 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
BSS84DW
Document number: DS30204 Rev. 18 - 2
2 of 5
www.diodes.com
January 2014
© Diodes Incorporated
BSS84DW
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-50 V
Drain-Gate Voltage (Note 5)
V
DGR
-50 V
Gate-Source Voltage Continuous
V
GSS
20
V
Drain Current (Note 6) Continuous
I
D
-130 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
P
D
300 mW
Thermal Resistance, Junction to Ambient
R
θJA
417
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-50 -75
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS

-1
-2
-100
µA
µA
nA
V
DS
= -50V, V
GS
= 0V, T
J
= +25°C
V
DS
= -50V, V
GS
= 0V, T
J
= +125°C
V
DS
= -25V, V
GS
= 0V, T
J
= +25°C
Gate-Body Leakage
I
GSS
10
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-0.8 -1.6 -2.0 V
V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance
R
DS
(
ON
)
6 10 Ω
V
GS
= -5V, I
D
= -0.100A
Forward Transconductance
g
FS
0.05
S
V
DS
= -25V, I
D
= -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
45 pF
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
25 pF
Reverse Transfer Capacitance
C
rss
12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D
(
ON
)
10
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50Ω, V
GS
= -10V Turn-Off Delay Time
t
D
(
OFF
)
18
ns
Notes: 5. R
GS
20KΩ.
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
BSS84DW
Document number: DS30204 Rev. 18 - 2
3 of 5
www.diodes.com
January 2014
© Diodes Incorporated
BSS84DW
0
50
100
25 50
75 100 125
150
175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
400
0
-600
-500
-400
-300
-200
-100
0-2
-1
-5
-4-3
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(mA)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
DS
T = 25C
A
°
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2-3-4-1
-8-7
-6
-5
I,
D
R
AI
N
-
C
U
R
R
E
N
T
(A)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 3 Drain-Current vs. Gate-Source Voltage
GS
0
1
2
4
5
3
6
8
7
10
9
0-1
-2 -3 -4
-5
V , GATE-SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
T= 25C
A
°
T = 125 C
A
°
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
3
6
9
12
15
-50
-25 0
25 50 125
100
75
150
T , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESISTANCE ( )
DS(ON)
0.0
5.0
10.0
-0.0
-0.2
-0.4 -0.6 -0.8
-1.0
I , DRAIN-CURRENT (A)
Fig. 6 On-Resistance vs. Drain-Current
D
15.0
20.0
25.0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V= -3.5V
GS
V = -4V
GS
V = -4.5V
GS
V = -6V
GS
V = -5V
GS
R
,
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
P1-P3P4-P5

BSS84DW-7-F

Mfr. #:
Buy BSS84DW-7-F
Manufacturer:
Diodes Incorporated
Description:
MOSFET -50V 200mW
Lifecycle:
New from this manufacturer.
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