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BTA41-800BRG

P1-P3P4-P6P7-P9
August 2009 Doc ID 7469 Rev 8 1/9
9
BTA40, BTA41, BTB41
40 A standard TRIACs
Features
■ High current TRIAC
■ Low thermal resistance with clip bonding
■ High commutation capability
■ BTA series UL1557 certified (File ref: 81734)
■ Packages are RoHS (2002/95/EC) compliant
Applications
■ On/off function in static relays, heating
regulation, induction motor starting circuits
■ Phase control operations in light dimmers,
motor speed controllers, and similar
Description
Available in high power packages, the
BTA/BTB40-41 series is suitable for general
purpose AC switching.
The BTA series provides an insulated tab (rated at
2500 V rms).
TOP3 insulated
(BTA41)
TOP3
(BTB41)
RD91 insulated
(BTA40)
A2
A1
G
G
A2
A1
G
A2
A2
A1
G
A2
A1
Table 1. Device summary
Symbol Parameter BTA40
(1)
1. Insulated package
BTA41
(1)
BTB41 Unit
I
T(RMS)
On-state rms current 40 41 41 A
V
DRM
/V
RRM
Repetitive peak off-state voltage 600 and 800 600 and 800 600 and 800 V
I
GT
Triggering gate current 50 50 50 mA
www.st.com
Characteristics BTA40, BTA41, BTB41
2/9 Doc ID 7469 Rev 8
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current
(full sine wave)
TOP3 T
c
= 95 °C
40 A
RD91 / TOP ins. T
c
= 80 °C
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
F = 50 Hz t = 20 ms 400
A
F = 60 Hz t = 16.7 ms 420
I
²
tI
²
t Value for fusing t
p
= 10 ms 1000 A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz T
j
= 125 °C 50 A/µs
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
t
p
= 10 ms T
j
= 25 °C
V
DSM
/V
RSM
+
100
V
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 8 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
I
GT
(1)
V
D
= 12 V R
L
= 33 Ω
I - II - III
IV
MAX.
50
100
mA
V
GT
ALL MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125 °C ALL MIN. 0.2 V
I
H
(2) I
T
= 500 mA MAX. 80 mA
I
L
I
G
= 1.2 I
GT
I - III - IV
MAX.
70
mA
II 160
dV/dt
(2)
V
D
= 67% V
DRM
gate open T
j
= 125 °C MIN. 500 V/µs
(dV/dt)c
(2)
(dI/dt)c = 20 A/ms T
j
= 125 °C MIN. 10 V/µs
1. Minimum I
GT
is guaranted at 5% of I
GT
max.
2. for both polarities of A2 referenced to A1
BTA40, BTA41, BTB41 Characteristics
Doc ID 7469 Rev 8 3/9
Table 4. Static characteristics
Symbol Test conditions Value Unit
V
T
(1)
I
TM
= 60 A t
p
= 380 µs T
j
= 25 °C MAX. 1.55 V
V
t0
(2)
Threshold voltage T
j
= 125 °C MAX. 0.85 V
R
d
(2)
Dynamic resistance T
j
= 125 °C MAX. 10 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25 °C
MAX.
5µA
T
j
= 125 °C 5 mA
1. Minimum I
GT
is guaranted at 5% of I
GT
max.
2. for both polarities of A2 referenced to A1
Table 5. Thermal resistance
Symbol Test conditions Value Unit
R
th(j-c)
Junction to case (AC)
RD91 (insulated) / TOP3 insulated 0.9
°C/W
TOP3 0.6
R
th(j-a)
Junction to ambient TOP3 / TOP3 insulated 50 °C/W
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
Figure 2. On-state rms current versus case
temperature (full cycle)
0 5 10 15 20 25 30 35 40
0
10
20
30
40
50
P(W)
I (A)
T(RMS)
180°
α
α
I (A)
T(RMS)
0
5
10
15
20
25
30
35
40
45
0 25 50 75 100 125
α=180°
BTA40
BTA41
BTB41
T (°C)
C
Figure 3. Relative variation of thermal
impedance versus pulse duration
Figure 4. On-state characteristics (maximum
values)
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
1.E-03
1.E-02
1.E-01
1.E+00
K=[Z /R
th th
]
t (s)
p
Z
BTA / BTB41
th(j-a)
Z
th(j-c)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
400
I (A)
TM
V (V)
TM
T = 25°C
j
.
T max.
V = 0.85V
R = 10 m
j
to
d
Ω
T=
j
T max.
j
P1-P3P4-P6P7-P9

BTA41-800BRG

Mfr. #:
Buy BTA41-800BRG
Manufacturer:
STMicroelectronics
Description:
Triacs 40 Amp 800 Volt
Lifecycle:
New from this manufacturer.
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