IXFP12N50PM Datasheet IXFP12N50PM | P1-P3

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250μA 500 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1mA 3.0 5.5 V

I

GSS

V

GS

= ±30V, V

DS

= 0V ±100 nA

I

DSS

V

DS

= V

DSS

5 μA

V

GS

= 0V T

J

= 125°C 250 μA

R

DS(on)

V

GS

= 10V, I

D

= 6A, Note 1 500 mΩ

Polar

TM

Power MOSFET

HiPerFET

TM

(Electrically Isolated Tab)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFP12N50PM

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 500 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ 500 V

V

GSS

Continuous ± 30 V

V

GSM

Transient ± 40 V

I

D25

T

C

= 25°C 6 A

I

DM

T

C

= 25°C, pulse width limited by T

JM

30 A

I

A

T

C

= 25°C 12 A

E

AS

T

C

= 25°C 600 mJ

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

=150°C 10 V/ns

P

D

T

C

= 25°C 50 W

T

J

- 55 ... +150 °C

T

JM

150 °C

T

stg

- 55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 °C

M

d

Mounting torque 1.13/10 Nm/lb.in.

Weight 2.5 g

G = Gate D = Drain

S = Source

Features



Plastic overmolded tab for electrical

isolation



International standard package



Unclamped Inductive Switching (UIS)

rated



Low package inductance

- easy to drive and to protect

Advantages



Easy to mount



Space savings

OVERMOLDED TO-220

(IXFP...M) OUTLINE

G

D

S

Isolated Tab

V

DSS

= 500V

I

D25

= 6A

R

DS(on)

≤≤

≤ 500m

ΩΩ

Ω

t

rr

≤ ≤

≤

300ns

IXFP12N50PM

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 6A, Note 1 7.5 13 S

C

iss

1830 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 182 pF

C

rss

16 pF

t

d(on)

22 ns

t

r

V

GS

= 10V, V

DS

= 0.5  V

DSS

, I

D

= 6A 27 ns

t

d(off)

R

G

= 10Ω (External) 65 ns

t

f

20 ns

Q

g(on)

29 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5  V

DSS

, I

D

= 6A 11 nC

Q

gd

10 nC

R

thJC

2.5 °C/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0V 12 A

I

SM

Repetitive, pulse width limited by T

JM

48 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

300 ns

Q

RM

2.8 μC

I

RM

18.2 A

Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

123

ISOLATED TO-220 (IXFP...M)

I

F

= 6A, -di/dt = 150A/μs,

V

R

= 100V, V

GS

= 0V

IXFP12N50PM

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

3

6

9

12

15

18

21

24

27

30

0 3 6 9 12 15 18 21 24 27 30

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

Fig. 3. Output Characteristics

@ 125

º

C

0

2

4

6

8

10

12

024681012

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5V

6V

Fig. 1. Output Characteristics

@ 25

º

C

0

2

4

6

8

10

12

01234567

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

6V

7V

Fig. 4. R

DS(on

)

Normalized to I

D

= 6A Value

vs. Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalized

I

D

= 12A

I

D

= 6A

V

GS

=

10 V

Fig. 5. R

DS(on)

Normalized to I

D

= 6A Value

vs. Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

0 3 6 9 12 15 18 21 24 27 30

I

D

- Amperes

R

D S ( o n )

- Normalized

T

J

= 125

º

C

T

J

= 25

º

C

V

GS

=

10V

Fig. 6. Drain Current vs. Case

Temperature

0

1

2

3

4

5

6

7

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFP12N50PM

IXFP12N50PM

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