- Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260
o
C/10s
- Weight: 8 mg (approximately)
- Marking Code: 1E
.
SYMBOL UNIT
P
D
mW
V
CBO
V
V
CEO
V
V
EBO
V
I
C
mA
T
J
, T
STG
o
C
Notes: Valid provided that electrodes are kept at ambient temperature
SYMBOL
UNIT
I
C
= 10 μAV
(BR)CBO
V
I
C
= 1 mA V
(BR)CEO
V
I
E
= 10 μAV
(BR)EBO
V
V
CB
= 60 V I
CBO
μA
V
CE
= 30 V I
CEO
nA
V
EB
= 5 V I
EBO
μA
V
CE
= 1 V
V
CE
= 1 V
V
CE
= 1 V
I
C
= 50 mA V
CE(sat)
V
I
C
= 50 mA V
BE(sat)
V
Transition frequency
V
CE
= 20 V I
C
= 10 mA f
T
MHz
Delay time
V
CC
= 3 V V
BE
= 0.5 V t
d
ns
Rise time
t
r
ns
Storage time
V
CC
= 3 V t
s
ns
Fall time
t
f
ns
Document Number: DS_S1501029 Version: A15
MMBT3904L
Taiwan Semiconductor
Small Signal Product
300mW, NPN Small Signal Transistor
FEATURES
SOT-23
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER VALUE
Emitter-Base Voltage 6
Collector Current 200
Power Dissipation 300
Collector-Base Voltage 60
Collector-Emitter Voltage 40
Junction and Storage Temperature Range -55 to +150
PARAMETER
MIN MAX
Collector-Base Breakdown Voltage
I
E
= 0
60 -
Collector-Emitter Breakdown Voltage
I
B
= 0
40 -
Emitter-Base Breakdown Voltage
I
C
= 0
6-
Collector Cut-off Current
I
E
= 0
-0.1
Emitter Cut-off Current
I
C
= 0
-0.1
DC Current Gain
I
C
= 10 mA
h
FE
100
I
C
= 50 mA
60
I
C
= 100 mA
30
0.3
I
B
= 5 mA
-Base-Emitter Saturation Voltage 0.95
Collector-Emitter Saturation Voltage
I
B
= 5 mA
-
I
C
= 10 mA
-35
f= 100MHz 250 -
I
B1
= 1.0 mA
-35
I
C
= 10 mA
- 200
I
B1
= I
B2
= 1.0 mA
-50
Collector Cut-off Current
V
BE(OFF)
= 3 V
-50
400
-
-
