1 Electrical ratings STF8NK100Z - STP8NK100Z
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1 Electrical ratings
Table 1. Absolute maximum ratings
Table 2. Thermal data
Table 3. Avalanche Characteristics
Symbol Parameter Value Unit
TO-220 TO-220FP
V
DS
Drain-source Voltage (V
GS
=0)
1000 V
V
DGR
Drain-gate Voltage 1000 V
V
GS
Gate-Source Voltage ± 30 V
I
D
Note 1 Drain Current (continuous) at T
C
= 25°C
6.5 6.5 A
I
D
Drain Current (continuous) at T
C
= 100°C
4.3 4.3 A
I
DM
Note 2
Drain Current (pulsed) 16 16 A
P
TOT
Total Dissipation at T
C
= 25°C
160 40 W
Derating Factor 1.28 0.32 W/°C
V
ESD(G-S)
Gate source ESD (HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt Note 3 Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
Insulation Withstand Voltage (DC) -- 2500 V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150 °C
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 °C/W
Rthj-a Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300 °C
Symbol Parameter Value Unit
I
AR
Avalanche Current, Repetitive or
Not-Repetitive (pulse width limited by Tj max)
6.5 A
E
AS
Single Pulse Avalanche Energy
(starting Tj= 25°C, I
D
=I
AR
, V
DD
=50V)
320 mJ
