TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/395
T4-LDS-0173 Rev. 1 (101069) Page 1 of 5
DEVICES LEVELS
2N3735 2N3735L JAN
2N3737 2N3737UB JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Min. Unit
Collector-Emitter Voltage V
CEO
40 Vdc
Collector-Base Voltage V
CBO
75 Vdc
Emitter-Base Voltage V
EBO
5 Vdc
Collector Current I
C
1.5 Adc
Total Power Dissipation
@ T
A
= +25°C
2N3735, 2N3735L
2N3737
2N3737UB
P
T
1.0 (1)
0.5 (3)
0.5 (5)
W
W
W
Total Power Dissipation
@ TC = +25°C
2N3735, 2N3735L
2N3737
2N3737UB
P
T
2.9 (2)
1.9 (4)
N/A
W
W
W
Operating & Storage Junction Temperature Range T
J
, T
stg
-65 to +200 °C
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding
devices.
(1) Derate linearly at 5.71 mW/°C above T
A
= +25°C
(2) Derate linearly at 16.6 mW/°C above T
A
= +25°C
(3) Derate linearly at 2.86 mW/°C above T
A
= +25°C
(4) Derate linearly at 11.3 mW/°C above T
A
= +25°C
(5) Derate linearly at 3.07 mW/°C above T
A
= +25°C
(6) T
A
= +55°C for UB on printed circuit board (PCB). PCB = FR4 .0625 inch (1.59MM) 1
– layer 1 oz Cu, horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.2
mm), R
θJA
with a defined thermal resistance condition included is measured at P
T
=
500mW.
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
V
(BR)CEO
40 Vdc
Collector-Base Cutoff Current
V
CB
= 75Vdc
V
CB
= 30Vd
I
CBO
10
250
μAdc
ηAdc
TO-5*
2N3735L
TO-39* (TO-205AD)
2N3735
3 PIN
2N3737UB
TO-46 (TO-206AB)
2N3737
