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NSBC144EPDXV6T5G

P1-P3P4-P6P7-P9P10-P10
MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6
www.onsemi.com
4
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5313DW1, NSBC144EPDXV6
Figure 2. V
CE(sat)
vs. I
C
024681
0
100
10
1
0.1
0.01
0.001
V
in
, INPUT VOLTAGE (V)
T
A
= −25°C
75°C
25°C
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
10
1
0.1
010 203040 50
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
25°C
−25°C
100
10
1 100
25°C
75°C
50
010203040
3.2
2.8
1.2
0.8
0.4
0
V
R
, REVERSE VOLTAGE (V)
Figure 6. Input Voltage vs. Output Current
0
20 40
50
10
1
0.1
0.01
I
C
, COLLECTOR CURRENT (mA)
25°C
75°C
V
CE
= 10 V
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
T
A
= −25°C
T
A
= −25°C
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
1.6
2.0
2.4
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6
www.onsemi.com
5
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5313DW1, NSBC144EPDXV6
Figure 7. V
CE(sat)
vs. I
C
100
10
1
0.1
010203040
I
C
, COLLECTOR CURRENT (mA)
50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
100
10
1
0.1
0.01
0.001
010
V
in
, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
1000
100
10
1 10 100
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
010203040
50
010203040
1
0
V
R
, REVERSE VOLTAGE (V)
12 3 4 5 6 7 8 9
V
O
= 2 V
I
C
/I
B
=10
T
A
=75°C
T
A
=75°C
f = 10 kHz
l
E
= 0 A
T
A
= 25°C
2
3
4
5
6
7
8
9
10
C
ob
, OUTPUT CAPACITANCE (pF)
V
in
, INPUT VOLTAGE (V)
75°C
25°C
T
A
= −25°C
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
T
A
= −25°C
75°C
25°C
V
O
= 5 V
I
C
, COLLECTOR CURRENT (mA)
25°C
−25°C
h
FE
, CURRENT GAIN
−25°C
25°C
MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6
www.onsemi.com
6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC144EPDP6
Figure 12. V
CE(sat)
vs. I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
100
1
0.1
40 50
Figure 13. DC Current Gain
Figure 14. Output Capacitance
10
0.1
0.01
02040
50
I
C
, COLLECTOR CURRENT (mA)
1000
100
1
0.1 10 10
0
I
C
, COLLECTOR CURRENT (mA)
Figure 15. Output Current vs. Input Voltage
100
10
1
0.1
0.001
048
V
in
, INPUT VOLTAGE (V)
28
Figure 16. Input Voltage vs. Output Current
50
010 203040
0.4
1.2
0
V
R
, REVERSE VOLTAGE (V)
30
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
/I
B
= 10
−55°C
25°C
V
CE
= 10 V
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
0.8
1.6
2.0
2.4
C
ob
, OUTPUT CAPACITANCE (pF)
V
O
= 5 V
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
10
150°C
−55°C
25°C
150°C
1
10
10
−55°C
25°C
150°C
−55°C
25°C
150°C
2012 16
1
24
0.01
P1-P3P4-P6P7-P9P10-P10

NSBC144EPDXV6T5G

Mfr. #:
Buy NSBC144EPDXV6T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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