DTC144TT1G

Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 1
1 Publication Order Number:
DTC144TT1/D
DTC144TT1
Preferred Device
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC–59
package which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: Class 1
ESD Rating – Machine Model: Class B
The SC–59 package can be soldered using wave or reflow. The
modified gull–winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
230 (Note 1.)
338 (Note 2.)
1.8 (Note 1.)
2.7 (Note 2.)
mW
°C/W
Thermal Resistance –
Junction-to-Ambient
R
θ
JA
540 (Note 1.)
370 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
R
θ
JL
264 (Note 1.)
287 (Note 2.)
°C/W
Junction and Storage
Temperature Range
T
J
, T
stg
–55 to +150 °C
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1 (K) R2 (K) Shipping
DTC144TT1 8T 47 3000/Tape & Reel
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
SC–59
CASE 318D
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
NPN SILICON
BIAS RESISTOR
TRANSISTOR
3
2
1
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
PIN 2
BASE
(INPUT)
R
1
R
2
MARKING DIAGRAM
8T = Specific Device Code
M = Date Code
8T M
Device Package Shipping
ORDERING INFORMATION
DTC144TT1 SC–59 3000/Tape & Reel
http://onsemi.com
DTC144TT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
100 nAdc
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
500 nAdc
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
0.2 mAdc
Collector-Base Breakdown Voltage
(I
C
= 10 µA, I
E
= 0)
V
(BR)CBO
50 Vdc
Collector-Emitter Breakdown Voltage (Note 1)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 Vdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
h
FE
160 350
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 1 mA)
V
CE(sat)
0.25 Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k)
V
OL
0.2 Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k)
V
OH
4.9 Vdc
Input Resistor R
1
32.9 47 61.1 k
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Figure 1. Derating Curve
350
200
150
100
50
0
–50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
R
θ
JA
= 370°C/W
250
P
D
, POWER DISSIPATION (mW)
300
DTC144TT1
http://onsemi.com
3
TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 2. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
V
CC
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
+12 V
Figure 3. Open Collector Inverter:
Inverts the Input Signal
Figure 4. Inexpensive, Unregulated Current Source

DTC144TT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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