MMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 4 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
5. Limiting values
[1] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 or 2 to pin 3.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
P
PPM
rated peak pulse power t
p
= 10/1000 µs
[1][2]
-40W
I
PPM
rated peak pulse current t
p
= 10/1000 µs
[1][2]
MMBZ12VDL
MMBZ12VDL/DG
- 2.35 A
MMBZ15VDL
MMBZ15VDL/DG
- 1.9 A
MMBZ18VCL
MMBZ18VCL/DG
- 1.6 A
MMBZ20VCL
MMBZ20VCL/DG
- 1.4 A
MMBZ27VCL
MMBZ27VCL/DG
-1A
MMBZ33VCL
MMBZ33VCL/DG
- 0.87 A
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[3]
- 350 mW
[4]
- 440 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
V
ESD
electrostatic discharge voltage
[1][2]
IEC 61000-4-2
(contact discharge)
-30kV
machine model - 2 kV
