DMN5L06W-7 Datasheet DMN5L06W-7 | P1-P3

Lead-free Green

DS30613 Rev. 3 - 2 1 of 4 DMN5L06W

www.diodes.com

ã Diodes Incorporated

DMN5L06W

N-CHANNEL ENHANCEMENT MODE

FIELD EFFECT TRANSISTOR

Features

·

N-Channel MOSFET

·

Low On-Resistance

·

Very Low Gate Threshold Voltage

·

Low Input Capacitance

·

Fast Switching Speed

·

Low Input/Output Leakage

·

Ultra-Small Surface Mount Package

·

Lead Free By Design/RoHS Compliant (Note 2)

·

“Green” Device (Note 3)

Maximum Ratings

@ T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

50 V

Drain-Gate Voltage R

GS

£ 1.0MW

V

DGR

50 V

Gate-Source Voltage Continuous

Pulsed

V

GSS

±20

±40

V

Drain Current (Note 1) Continuous

I

D

280 mA

Drain Current (Note 1) Pulsed

I

DM

1.5 A

Total Power Dissipation (Note 1)

P

d

200 mW

Thermal Resistance, Junction to Ambient (Note 1)

R

qJA

625 °C/W

Operating and Storage Temperature Range

T

j

,T

STG

-55 to +150

°C

A

D

M

J

L

FD

B

C

H

K

G

S

G

Mechanical Data

·

Case: SOT-323

·

Case Material: Molded Plastic, "Green" Molding

Compound. UL Flammability Classification Rating 94V-0

·

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals Connections: See Diagram

·

Terminals: Finish ¾ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

·

Marking: Date Code and Type Code, See Page 2

·

Ordering & Date Code Information: See Page 2

· Weight: 0.006 grams (approximate)

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php

.

SOT-323

Dim Min Max

A

0.25 0.40

B

1.15 1.35

C

2.00 2.20

D

0.65 Nominal

E

0.30 0.40

G

1.20 1.40

H

1.80 2.20

J

0.0 0.10

K

0.90 1.00

L

0.25 0.40

M

0.10 0.18

a

0° 8°

All Dimensions in mm

Source

EQUIVALENT CIRCUI

T

Gate

Drain

NEW PRODUCT

DS30613 Rev. 3 - 2 2 of 4 DMN5L06W

www.diodes.com

Electrical Characteristics

@ T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

BV

DSS

50 ¾¾V

V

GS

= 0V, I

D

= 10mA

Zero Gate Voltage Drain Current @ T

C

= 25°C

@ T

C

= 125°C

I

DSS

¾¾

0.1

500

µA

V

DS

= 50V, V

GS

= 0V

Gate-Body Leakage

I

GSS

¾¾±20 nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

V

GS(th)

0.49 ¾ 1.2 V

V

DS

=V

GS

, I

D

= 250mA

Static Drain-Source On-Resistance

R

DS (ON)

¾

1.6

2.2

3

4

W

V

GS

= 2.7V, I

D

= 0.2A,

V

GS

= 1.8V, I

D

= 50mA

On-State Drain Current

I

D(ON)

0.5 1.0 ¾ A

V

GS

= 10V, V

DS

= 7.5V

Forward Transconductance

½Y

fs

½

200 ¾¾mS

V

DS

=10V, I

D

= 0.2A

Source-Drain Diode Forward Voltage

V

SD

0.5 ¾ 1.4 V

V

GS

= 0V, I

S

= 115mA

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

¾¾50 pF

V

DS

= 25V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

¾¾25 pF

Reverse Transfer Capacitance

C

rss

¾¾5.0 pF

NEW PRODUCT

0

0.3

0.6

0.9

0

1

2

3

4

5

V DRAIN-SOURCE VOLTAGE (V)

Fi

g

.1 T

y

pical Output Characteristics

DS

,

I DRAIN CURRENT (A)

D

,

1.2

1

.5

6V

5V

3V

4V

V=10V

8V

6V

5V

4V

3V

GS

10V

8V

V , GATE-SOURCE VOLTAGE (V)

Fi

g

.2 T

y

pical Transfer Characteristics

GS

0.01

3

I,

D

DRAIN CURRENT (A)

0.001

0.1

1

0

0.5

1

1.5

2

2.5

3.5

V = 10V

Pulsed

DS

T=150C

A

°

T = 125 C

A

°

T=85C

A

°

T=25C

A

°

T=-55C

A

°

T=0C

A

°

T=-25C

A

°

T , CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage

vs. Channel Tem

p

erature

ch

0

-50

-25

0

25

50

75

100

125

150

V GATE THRESHOLD VOLTAGE (V)

GS(th),

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0

.

8

-75

V = 10V

I=1mA

Pulsed

DS

D

0.1

I DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance

Vs. Drain Current

D

,

1

10

0.001

0.01

0.1

1

V = 10V

Pulsed

GS

T = 150 C

A

°

T=-55C

A

°

T = 125 C

A

°

T=-25C

A

°

T=85C

A

°

T=0C

A

°

T=25C

A

°

DS30613 Rev. 3 - 2 3 of 4 DMN5L06W

www.diodes.com

1

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

D

10

0.1

1

0.001

0.01

0.1

V=5V

Pulsed

GS

T=-55C

A

°

T=150C

A

°

T=-25C

A

°

T=25C

A

°

T=0C

A

°

T = 125 C

A

°

T=85C

A

°

V GATE SOURCE VOLTAGE (V)

Fig. 6 Static Drain-Source On-Resistance

vs. Gate-Source Volta

g

e

GS,

0

1

2

3

4

5

6

7

8

0

5

10

15

20

T=25C

Pulsed

A

°

I = 140mA

D

I = 280mA

D

NEW PRODUCT

T , CHANNEL TEMPERATURE ( C)

Fig. 7

ch

°

Static Drain-Source On-State Resistance

vs. Channel Temperature

0.5

0.9

0.7

1.9

1.7

1.5

1.3

1.1

2.1

2.5

2.3

-50

-25

0

25

50

75

100

125

150

I = 140mA

D

V = 10V

Pulsed

GS

I = 280mA

D

I , REVERSE DRAIN CURRENT (A)

DR

0.001

0.01

0.1

0.5

0

1

V,

Fig. 8 Reverse Drain Current

vs. Source-Drain Volta

g

e

SD

SOURCE-DRAIN VOLTAGE (V)

T=-55C

A

°

T=-25C

A

°

T=25C

A

°

T=85C

A

°

T = 125 C

A

°

T=150C

A

°

V=0V

Pulsed

GS

DMN5L06W-7

DMN5L06W-7

Products related to this Datasheet