NTMD6N03R2G Datasheet NTMD6N03R2G, NTMD6N03R2 | P1-P3

 Semiconductor Components Industries, LLC, 2011

October, 2011 -- Rev. 3

1 Publication Order Number:

NTMD6N03R2/D

NTMD6N03R2,

NVMD6N03R2

Power MOSFET

30V,6A,DualN--ChannelSOIC--8

Features

 Designed for use in low voltage, high speed switching applications

 Ultra Low On--Resistance Provides

Higher Ef ficiency and Extends Battery Life

-- R

DS(on)

= 0.024 Ω,V

GS

= 10 V (Typ)

-- R

DS(on)

= 0.030 Ω,V

GS

= 4.5 V (Typ)

 Miniature SOIC--8 Surface Mount Package Saves Board Space

 Diode is Characterized for Use in Bridge Circuits

 Diode Exhibits High Speed, with Soft Recovery

 AEC Q101 Qualified -- NVMD6N03R2

 These Devices are Pb--Free and are RoHS Compliant

Applications

 DC--DC Converters

 Computers

 Printers

 Cellular and Cordless Phones

 Disk Drives and Tape Drives

MAXIMUM RATINGS (T

J

=25C unless otherwise noted)

Rating

Symbol Value Unit

Drain--to--Source Voltage V

DSS

30 Volts

Gate--to--Source Voltage -- Continuous V

GS

20 Volts

Drain Current

-- Continuous @ T

A

=25C

-- Single Pulse (tp  10 ms)

I

D

I

DM

6.0

30

Adc

Apk

Total Power Dissipation

@T

A

=25C(Note1)

@T

A

=25C(Note2)

P

D

2.0

1.29

Watts

Operating and Storage Temperature

Range

T

J

,T

stg

-- 5 5 t o

+150

C

Single Pulse Drain--to--Source Avalanche

Energy -- Starting T

J

=25C

(V

DD

=30Vdc,V

GS

=5.0Vdc,

V

DS

= 20 Vdc, Peak I

L

=9.0Apk,

L=10mH,R

G

=25Ω)

E

AS

325 mJ

Thermal Resistance

-- Junction--to--Ambient (Note 1)

-- Junction--to--Ambient (Note 2)

R

θ

JA

62.5

97

C/W

Maximum Lead Temperature for Soldering

Purposes for 10 seconds

T

L

260 C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 pad size, t  10 s

2. When surface mounted to an FR4 board using 1 pad size, t = steady state

Device Package Shipping

†

ORDERING INFORMATION

http://onsemi.com

D

S

G

N--Channel

D

S

G

V

DSS

R

DS(ON)

Typ I

D

Max

30 V

24 mΩ @V

GS

=10V

6.0 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SOIC--8

CASE 751

STYLE 11

MARKING DIAGRAM &

PIN A SSIGNMENT

E6N03 = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G = Pb--Free Package

E6N03

AYWW G

G

1

8

1

8

S1 G1 S2 G2

D1 D1 D2 D2

(Note: Microdot may be in either location)

NTMD6N03R2G SOIC--8

(Pb--Free)

2500 / Tape &

Reel

NVMD6N03R2G SOIC--8

(Pb--Free)

2500 / Tape &

Reel

NTMD6N03R2, NVMD6N03R2

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

C

=25C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain--to--Source Breakdown Voltage

(V

GS

=0Vdc,I

D

= 250 mA)

Temperature Coefficient (Positive)

V

(BR)DSS

30

--

30

--

Vdc

mV/C

Zero Gate Voltage Drain Current

(V

DS

=24Vdc,V

GS

=0Vdc,T

J

=25C)

(V

DS

=24Vdc,V

GS

=0Vdc,T

J

= 125C)

I

DSS

--

1.0

20

mAdc

Gate--Body Leakage Current

(V

GS

= 20 Vdc, V

DS

=0Vdc)

I

GSS

-- -- 100

nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(V

DS

=V

GS

,I

D

= 250 mAdc)

Temperature Coefficient (Negative)

V

GS(th)

1.0

--

1.8

4.6

2.5

--

Vdc

mV/C

Static Drain--to--Source On--State Resistance

(V

GS

=10Vdc,I

D

=6Adc)

(V

GS

=4.5Vdc,I

D

=3.9Adc)

R

DS(on)

--

0.024

0.030

0.032

0.040

Ω

Forward Transconductance

(V

DS

=15Vdc,I

D

=5.0Adc)

g

FS

-- 10 --

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

DS

=24Vdc,V

GS

=0Vdc,

f=1.0MHz)

C

iss

-- 680 950 pF

Output Capacitance C

oss

-- 210 300

Reverse Transfer Capacitance C

rss

-- 70 135

SWITCHING CHARACTERISTICS (Notes 3 & 4)

Turn--On Delay Time

(V

DD

=15Vdc,I

D

=1A,

V

GS

=10V,

R

G

=6Ω)

t

d(on)

-- 9 18

ns

Rise Time t

r

-- 22 40

Turn--Off Delay Time t

d(off)

-- 45 80

Fall Time t

f

-- 45 80

Turn--On Delay Time

(V

DD

=15Vdc,I

D

=1A,

V

GS

=4.5V,

R

G

=6Ω)

t

d(on)

-- 13 30

ns

Rise Time t

r

-- 27 50

Turn--Off Delay Time t

d(off)

-- 22 40

Fall Time t

f

-- 34 70

Gate Charge

(V

DS

=15Vdc,

V

GS

=10Vdc,

I

D

=5A)

Q

T

-- 19 30

nC

Q

1

-- 2.4 --

Q

2

-- 5.0 --

Q

3

-- 4.3 --

BODY--DRAIN DIODE RATINGS (Note 3)

Diode Forward On--Voltage

(I

S

=1.7Adc,V

GS

=0V)

(I

S

=1.7Adc,V

GS

=0V,T

J

= 150C)

V

SD

--

0.75

0.62

1.0

--

Vdc

Reverse Recovery Time

(I

S

=5A,V

GS

=0V,

dI

S

/dt = 100 A/ms)

t

rr

-- 26 --

ns

t

a

-- 11 --

t

b

-- 15 --

Reverse Recovery Stored Charge

(I

S

=5A,dI

S

/dt = 100 A/ms, V

GS

=0V)

Q

RR

-- 0.015 --

mC

3. Pulse Test: Pulse Width  300 ms, Duty Cycle  2%.

4. Switching characteristics are independent of operating junction temperature.

NTMD6N03R2, NVMD6N03R2

http://onsemi.com

3

TYPICAL MOSFET ELECTRICAL CHARACTERISTICS

1.8

1.6

0.8

1.2

0.6

100

10

10,000

0

10

2

4

0.40.2

V

DS

, DRAIN--TO--SOURCE VOLTAGE (VOLTS)

I

D

, DRAIN CURRENT (AMPS)

0

V

GS

, GATE--TO --SOURCE VOLTAGE (VOLTS)

Figure 1. On--Region Characteristics Figure 2. Transfer Characteristics

I

D

, DRAIN CURRENT (AMPS)

1

0.04

0.03

0.025

765

0.02

0.015

0.01

28

Figure 3. On--Resistance versus Drain Current

and Temperature

I

D

, DRAIN CURRENT (AMPS)

Figure 4. On--Resistance versus Drain Current

and Gate Voltage

I

D

, DRAIN CURRENT (AMPS)

R

DS(on)

, DRAIN--TO--SOURCE RESISTANCE (Ω)

R

DS(on)

, DRAIN--TO--SOURCE RESISTANCE (Ω)

Figure 5. On--Resistance Vari ation with

Temperature

T

J

, JUNCTION TEMPERATURE (C)

Figure 6. Drain--to--Source Leakage Current

versus Voltage

V

DS

, DRAIN--TO--SOURCE VOLTAGE (VOLTS)

R

DS(on)

, DRAIN--TO--SOURCE RESISTANCE

(NORMALIZED)

I

DSS

, LEAKAGE (nA)

-- 5 0 0--25 5025

04215

0152010 305

2

6

8

V

DS

 10 V

T

J

=25C

T

J

=--55C

T

J

= 125C

150

I

D

=3A

V

GS

=10V

12

0.045

0.05

V

GS

=2.6V

V

GS

=10

1 1.2 1.4 1.8

10

4

0

2

6

8

12

1

0.04

0.035

0.03

654

0.02

0.015

0.01

312

0.045

0.05

1000

T

J

=25C

T

J

=25C

0.80.6 1.6

10 V

6V

4V

3.6 V

3.4 V

3.8 V

3.2 V

3V

2.8 V

3

34 1091112

0.035

T = 125C

T=--55C

T=25C

21110987

0.025

V

GS

=4.5V

V

GS

=10V

1

10075 125

1.4

25

V

GS

=0V

T

J

= 150C

T

J

= 125C

NTMD6N03R2G

NTMD6N03R2G

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