Data Sheet PN10689EJ05V0DS
5
PS9313L,PS9313L2
ELECTRICAL CHARACTERISTICS (TA = −40 to +110°C, VCC = 15 V, unless otherwise specified)
Parameter Symbol Conditions MIN. TYP.
*1
MAX. Unit
Diode Forward Voltage VF IF = 10 mA, TA = 25°C 1.2 1.56 1.9 V
Reverse Current IR VR = 3 V, TA = 25°C 10
µ
A
Terminal Capacitance Ct V = 0 V, f = 1 MHz 30 pF
Detector Low Level Output Voltage VOL IF = 10 mA, IOL = 2.4 mA 0.13 0.6 V
High Level Output Current IOH VCC = 30 V, VF = 0.8 V 1.0 50
µ
A
High Level Supply Current ICCH VCC = 30 V, VF = 0.8 V, VO = open 0.6 1.3 mA
Low Level Supply Current ICCL VCC = 30 V, IF = 10 mA, VO = open 0.7 1.3 mA
Coupled Threshold Input Current
(H → L)
IFHL VO = 0.8 V, IO = 0.75 mA 0.75 5.0 mA
Current Transfer Ratio (IC/IF) CTR IF = 10 mA, VO = 0.6 V 44 110 %
Isolation Resistance RI-O VI-O = 1 kVDC 10
11
Ω
Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.7 pF
Propagation Delay Time
(H → L)
*2
t
PHL IF = 10 mA, RL = 20 kΩ, CL = 100 pF,
V
THHL = 1.5 V, VTHLH = 2.0 V
240 500 ns
Propagation Delay Time
(L → H)
*2
t
PLH 460 750
Maximum Propagation
Delays
tPLH−tPHL −200 220 650
Pulse Width Distortion
(PWD)
tPHL−tPLH⏐ 220 650
Common Mode
Transient Immunity at High
Level Output
*3
CM
H TA = 25°C, IF = 0 mA, VO > 3.0 V,
V
CM = 1.5 kV, RL = 20 kΩ,
C
L = 100 pF
15 kV/
µ
s
Common Mode
Transient Immunity at Low
Level Output
*3
CM
L TA = 25°C, IF = 10 mA, VO < 1.0 V,
V
CM = 1.5 kV, RL = 20 kΩ,
C
L = 100 pF
15 kV/
µ
s
<R>
