CDBU00340
Page 1
QW-A1007
REV:A
0.071(1.80)
0.063(1.60)
0.014(0.35) Typ.
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0.012 (0.30) Typ.
0.028(0.70) Typ.
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
VRRM
Repetitive peak reverse voltage
Symbol
Parameter
Conditions Min
Max
Unit
V
45
VR
Reverse voltage
V
40
IFSM
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
500
PD
mW
O
C
150
+125
-40
Power Dissipation
Sunction temperature
Tj
O
C
+125
Junction temperature
TSTG
mA
IO
Average forward current
mA
30
Symbol
Typ
Parameter
Conditions Min
Max
Unit
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
IR
uA
1.5
Forward voltage
IF = 1 mA DC
VF
V
0.37
0.50
CT
Capacitance between terimnals
pF
F = 1 MHZ and 1 VDC reverse voltage
Reverse current
VR = 30V
VR = 40V
1.00
SMD Schottky Barrier Diode
0603/SOD-523F
Features
-Designed for mounting on small surface.
-Extremely thin package.
-Low stored charge.
-Majority carrier conduction.
Mechanical data
-Case: 0603/SOD-523F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight: 0.003 gram(approx.).
Io = 30 mA
VR = 40 Volts
RoHS Device
