IXYS reserves the right to change limits, test conditions, and dimensions.
IXGR 120N60C2
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
g
fs
I
C
= 60 A; V
CE
= 10 V, Note 1 50 50 75 S
C
ies
11 nF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 680 pF
C
res
190 pF
Q
g
350 nC
Q
ge
I
C
= I
T
, V
GE
= 15 V, V
CE
= 0.5 V
CES
72 nC
Q
gc
131 nC
t
d(on)
18 ns
t
ri
25 ns
t
d(off)
95 150 ns
t
fi
45 ns
E
off
0.9 1.6 mJ
t
d(on)
18 ns
t
ri
25 ns
E
on
1.6 mJ
t
d(off)
130 ns
t
fi
85 ns
E
off
1.5 mJ
R
thJC
0.42 K/W
R
thJC
0.15 K/W
Inductive load, T
J
= 25°C
I
C
= 80 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 1.0 Ω
Inductive load, T
J
= 125°C
I
C
= 80 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 1.0 Ω
Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %.
2: Test current I
T
= 100 A.
ISOPLUS 247 Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
