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PZTA92T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
June, 2017 − Rev. 11
1 Publication Order Number:
PZTA92T1/D
PZTA92T1G,
NSVPZTA92T1G
High Voltage Transistor
PNP Silicon
Features
• Complement to PZTA42T1G
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CEO
−300 Vdc
Collector−Base Voltage V
CBO
−300 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current I
C
−500 mAdc
Total Power Dissipation
up to @ T
A
= 25°C (Note 1)
P
D
1.5
W
Storage Temperature Range T
stg
−65 to +150 °C
Junction Temperature T
J
150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR-4 glass epoxy printed circuit board
1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
q
JA
83.3
°C/W
2. Device mounted on a FR−4 glass epoxy printed circuit board
1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
SOT−223 PACKAGE
PNP SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
1
2
3
4
1
AYW
P2DG
G
P2D = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
www.onsemi.com
COLLECTOR 2,4
BASE
1
EMITTER 3
Device Package Shipping
†
ORDERING INFORMATION
PZTA92T1G,
NSVPZTA92T1G
SOT−223
(Pb−Free)
1,000 / Tape & Ree
l
NSVPZTA92T3G SOT−223
(Pb−Free)
4,000 / Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
PZTA92T1G, NSVPZTA92T1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristics
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= −1.0 mAdc, I
B
= 0)
V
(BR)CEO
−300 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= −100 mAdc, I
E
= 0)
V
(BR)CBO
−300 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −100 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 −
Vdc
Collector-Base Cutoff Current
(V
CB
= −200 Vdc, I
E
= 0)
I
CBO
− −0.25
mAdc
Emitter−Base Cutoff Current
(V
BE
= −3.0 Vdc, I
C
= 0)
I
EBO
− −0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc)
(I
C
= −10 mAdc, V
CE
= −10 Vdc)
(I
C
= −30 mAdc, V
CE
= −10 Vdc)
h
FE
25
40
40
−
−
−
−
Saturation Voltages
(I
C
= −20 mAdc, I
B
= −2.0 mAdc)
(I
C
= −20 mAdc, I
B
= −2.0 mAdc)
V
CE(sat)
V
BE(sat)
−
−
−0.5
−0.9
Vdc
DYNAMIC CHARACTERISTICS
Collector−Base Capacitance @ f = 1.0 MHz
(V
CB
= −20 Vdc, I
E
= 0)
C
cb
− 6.0
pF
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
f
T
50 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test Conditions, t
p
= 300 ms, d 0.02.
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
300
0.1 1.0
10
250
200
150
0
h
FE
, DC CURRENT GAIN
T
J
= +125°C
25°C
-55°C
V
CE
= 10 Vdc
100
50
100
PZTA92T1G, NSVPZTA92T1G
www.onsemi.com
3
Figure 2. Capacitance
I
C
, COLLECTOR CURRENT (mA)
150
90
70
50
30
10
T
J
= 25°C
V
CE
= 20 Vdc
F = 20 MHz
f, CURRENT-GAIN — BANDWIDTH (MHz)
T
1
Figure 3. Current−Gain − Bandwidth
130
21
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
0.1
100
0.1
10
1.0 10
1000
C
ib
@ 1MHz
100
1.0
C
cb
@ 1MHz
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (V)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
110
3579
1917151311
V
BE(on)
@ 25°C, V
CE
= 10 V
V
CE(sat)
@ 25°C, I
C
/I
B
= 10
V
BE(sat)
@ 25°C, I
C
/I
B
= 10
V
CE(sat)
@ 125°C, I
C
/I
B
= 10
V
CE(sat)
@ -55°C, I
C
/I
B
= 10
V
BE(sat)
@ 125°C, I
C
/I
B
= 10
V
BE(sat)
@ -55°C, I
C
/I
B
= 10
V
BE(on)
@ 125°C, V
CE
= 10 V
V
BE(on)
@ -55°C, V
CE
= 10 V
Figure 4. ”ON” Voltages
Figure 5. Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1000101
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
10 ms
1.0 s
1
100
P1-P3P4-P4

PZTA92T1G

Mfr. #:
Buy PZTA92T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 300V PNP
Lifecycle:
New from this manufacturer.
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