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SBL25L20CTHE3/45

P1-P3P4-P5
SBL(F,B)25L20CT thru SBL(F,B)25L30CT
Vishay General Semiconductor
Document Number: 88731
Revision: 08-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Low V
F
Common Cathode Schottky Rectifier
FEATURES
• Low power loss, high efficiency
• Very low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
switching mode power supplies, freewheeling diodes,
OR-ing diodes, dc-to-dc converters and polarity
protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
12.5 A x 2
V
RRM
20 V to 30 V
I
FSM
180 A
V
F
0.39 V
T
J
max. 150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
SBL25LxxCT
ITO-220AB
SBLF25LxxCT
SBLB25LxxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL25L20CT SBL25L25CT SBL25L30CT UNIT
Maximum repetitive peak reverse voltage V
RRM
20 25 30 V
Maximum average forward rectified
current at T
C
= 95 °C
total device
per diode
I
F(AV)
25
12.5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
180 A
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
SBL(F,B)25L20CT thru SBL(F,B)25L30CT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88731
Revision: 08-Apr-08
2
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage per diode
(1)
12.5 A
T
J
= 125 °C
T
J
= 25 °C
V
F
0.39
0.49
V
Maximum instantaneous reverse current at rated DC
blocking voltage per diode
(1)
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
I
R
0.90
50
100
mA
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL SBLF SBLB UNIT
Typical thermal resistance from junction to case per diode R
θJC
1.5 4.0 1.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB SBL25L20CT-E3/45 1.85 45 50/tube Tube
ITO-220AB SBLF25L20CT-E3/45 1.99 45 50/tube Tube
TO-263AB SBLB25L20CT-E3/45 1.35 45 50/tube Tube
TO-263AB SBLB25L20CT-E3/81 1.35 81 800/reel Tape reel
TO-220AB SBL25L20CTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB SBLF25L20CTHE3/45
(1)
1.99 45 50/tube Tube
TO-263AB SBLB25L20CTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB SBLB25L20CTHE3/81
(1)
1.35 81 800/reel Tape reel
Figure 1. Forward Current Derating Curve
0
15
20
30
25
500 100 150
10
5
T
J
= 150 °C
Resistive or Inductive Load
Average Forward Rectified Current (A)
Lead Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
50
100
150
250
200
1 10010
300
Number of Cycles at 60 Hz
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
SBL(F,B)25L20CT thru SBL(F,B)25L30CT
Vishay General Semiconductor
Document Number: 88731
Revision: 08-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0 0.2 0.4 0.6
0.01
0.1
10
1
100
0.1 0.3 0.5
T
J
= 150 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 100 °C
T
J
= 125 °C
60402010 10080
0.01
1
10
1000
0.1
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (mA)
100
705030 90
T
J
= 150 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
0.1 101 100
10 000
1000
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Junction Capacitance (pF)
Reverse Voltage (V)
0.10.01 101 100
100
10
1
0.1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

SBL25L20CTHE3/45

Mfr. #:
Buy SBL25L20CTHE3/45
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-V30D45CHM3_A/I
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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