Vishay Siliconix
Si7447ADP
Document Number: 73358
S09-0273-Rev. C, 16-Feb-09
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
• 100 % R
g
Tested
APPLICATIONS
• Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
- 30
0.0065 at V
GS
= - 10 V
- 35 100 nC
Ordering Information: Si7447ADP-T1-E3 (Lead (Pb)-free)
Si7447ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 30
V
Gate-Source Voltage
V
GS
± 25
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
- 35
A
T
C
= 70 °C
- 28
T
A
= 25 °C
- 21.5
b, c
T
A
= 70 °C
- 17
b, c
Pulsed Drain Current
I
DM
- 60
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
- 28
T
A
= 25 °C
- 4.3
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
40
Avalanche Energy
E
AS
80 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
83.3
W
T
C
= 70 °C
53.3
T
A
= 25 °C
5.4
b, c
T
A
= 70 °C
3.4
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t ≤ 10 s
R
thJA
18 23
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
1.0 1.3
S
G
D
P-Channel MOSFET