MBR2045MFST1G

© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 1
1 Publication Order Number:
MBR2045MFS/D
MBR2045MFS,
NRVB2045MFS
Switch Mode
Power Rectifiers
These state−of−the−art devices have the following features:
Features
Low Power Loss / High Efficiency
New Package Provides Capability of Inspection and Probe After
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
150°C Operating Junction Temperature
Wettable Flacks Option Available
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
Applications
Output Rectification in Compact Portable Consumer Applications
Freewheeling Diode used with Inductive Loads
Device Package Shipping
ORDERING INFORMATION
MBR2045MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
45 VOLTS
http://onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B2045 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
B2045
AYWZZ
A
A
A
Not Used
C
C
1
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR2045MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB2045MFST1G* SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB2045MFST3G* SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
MBR2045MFS, NRVB2045MFS
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 130°C)
I
F(AV)
20 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave, 20 kHz, T
C
= 135°C)
I
FRM
40 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
400 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature T
J
−55 to +150 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) E
AS
150 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
1.6 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 15 A, T
J
= 125°C)
(i
F
= 15 A, T
J
= 25°C)
(i
F
= 30 A, T
J
= 125°C)
(i
F
= 30 A, T
J
= 25°C)
v
F
0.35
0.44
0.46
0.51
0.41
0.49
0.58
0.61
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
i
R
200
0.3
300
0.6
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
MBR2045MFS, NRVB2045MFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
0.10
1.00
10.00
100.00
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.800.90
Figure 1. Typical Instantaneous Forward
Voltage
Figure 2. Maximum Instantaneous Forward
Voltage
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
T
A
= 150°C
125°C
25°C
T
A
= 150°C
125°C
25°C
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
0.10
1.00
10.00
100.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
−40°C
−40°C
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1.E−10
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
0 10203040
Figure 3. Typical Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= −40°C
0 10203040
1.E−10
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= −40°C
10
100
1,000
10,000
0 10203040
455152535
Figure 5. Typical Junction Capacitance
V
R
, REVERSE VOLTAGE (V)
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
0
5
10
15
20
25
30
35
40
45
50
55
60
0 20 40 60 80 100 120 140 160
Figure 6. Current Derating TO−220AB
T
C
, CASE TEMPERATURE (°C)
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
R
q
JC
= 1.6°C/W
dc
SQUARE WAVE

MBR2045MFST1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Rectifiers 20 A, 45 V SCHOTTKY DIODE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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