FW907
No. A1810-2/6
Electrical Characteristics
at Ta=25°C
Parameter Symbol Conditions
Ratings
Unit
min typ max
[N-channel]
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=1mA, V
GS
=0V 30 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=30V, V
GS
=0V 1
μ
A
Gate-to-Source Leakage Current I
GSS
V
GS
=±16V, V
DS
=0V ±10
μ
A
Cutoff Voltage V
GS
(off) V
DS
=10V, I
D
=1mA 1.2 2.6 V
Forward Transfer Admittance
|
yfs
|
V
DS
=10V, I
D
=10A 5.2 S
Static Drain-to-Source On-State Resistance
R
DS
(on)1 I
D
=10A, V
GS
=10V 13 17 m
Ω
R
DS
(on)2 I
D
=5A, V
GS
=4.5V 21 30 m
Ω
R
DS
(on)3 I
D
=5A, V
GS
=4V 27 38 m
Ω
Input Capacitance
Ciss V
DS
=10V, f=1MHz 1000 pF
Output Capacitance
Coss V
DS
=10V, f=1MHz 170 pF
Reverse Transfer Capacitance
Crss V
DS
=10V, f=1MHz 100 pF
Turn-ON Delay Time
t
d
(on) See specifi ed Test Circuit. 12 ns
Rise Time
t
r
See specifi ed Test Circuit. 75 ns
Turn-OFF Delay Time
t
d
(off) See specifi ed Test Circuit. 57 ns
Fall Time
t
f
See specifi ed Test Circuit. 44 ns
Total Gate Charge
Qg V
DS
=15V, V
GS
=10V, I
D
=10A 17 nC
Gate-to-Source Charge
Qgs V
DS
=15V, V
GS
=10V, I
D
=10A 3.6 nC
Gate-to-Drain “Miller” Charge
Qgd V
DS
=15V, V
GS
=10V, I
D
=10A 3.0 nC
Diode Forward Voltage
V
SD
I
S
=10A, V
GS
=0V 0.85 1.2 V
[P-channel]
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=--1mA, V
GS
=0V --30 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=--30V, V
GS
=0V --1
μ
A
Gate-to-Source Leakage Current I
GSS
V
GS
=±16V, V
DS
=0V ±10
μ
A
Cutoff Voltage V
GS
(off) V
DS
=--10V, I
D
=--1mA --1.2 --2.6 V
Forward Transfer Admittance
|
yfs
|
V
DS
=--10V, I
D
=--8A 10 S
Static Drain-to-Source On-State Resistance
R
DS
(on)1 I
D
=--8A, V
GS
=--10V 20 26
m
Ω
R
DS
(on)2 I
D
=--4A, V
GS
=--4.5V 32 45
m
Ω
R
DS
(on)3 I
D
=--4A, V
GS
=--4V 36 51
m
Ω
Input Capacitance
Ciss V
DS
=--10V, f=1MHz 875 pF
Output Capacitance
Coss V
DS
=--10V, f=1MHz 200 pF
Reverse Transfer Capacitance
Crss V
DS
=--10V, f=1MHz 150 pF
Turn-ON Delay Time
t
d
(on) See specifi ed Test Circuit. 8.1 ns
Rise Time
t
r
See specifi ed Test Circuit. 73 ns
Turn-OFF Delay Time
t
d
(off) See specifi ed Test Circuit. 84 ns
Fall Time
t
f
See specifi ed Test Circuit. 74 ns
Total Gate Charge
Qg V
DS
=--15V, V
GS
=--10V, I
D
=--8A 18 nC
Gate-to-Source Charge
Qgs V
DS
=--15V, V
GS
=--10V, I
D
=--8A 2.1 nC
Gate-to-Drain “Miller” Charge
Qgd V
DS
=--15V, V
GS
=--10V, I
D
=--8A 4.7 nC
Diode Forward Voltage
V
SD
I
S
=--8A, V
GS
=0V --0.82 --1.2 V
