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PHPT61010PYX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
NXP Semiconductors
PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
PHPT61010PY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 20 March 2015 6 / 16
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= -80 V; I
E
= 0 A; T
amb
= 25 °C - - -100 nAI
CBO
collector-base cut-off
current
V
CB
= -80 V; I
E
= 0 A; T
j
= 150 °C - - -50 µA
I
CES
collector-emitter cut-off
current
V
CE
= -80 V; V
BE
= 0 V; T
amb
= 25 °C - - -100 nA
I
EBO
emitter-base cut-off
current
V
EB
= -8 V; I
C
= 0 A; T
amb
= 25 °C - - -100 nA
V
CE
= -2 V; I
C
= -0.5 A; T
amb
= 25 °C 180 330 -
V
CE
= -2 V; I
C
= -1 A; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
170 265 -
V
CE
= -2 V; I
C
= -5 A; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
60 75 -
h
FE
DC current gain
V
CE
= -2 V; I
C
= -10 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
10 15 -
I
C
= -1 A; I
B
= -50 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C
- -55 -90 mV
I
C
= -5 A; I
B
= -0.5 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- -160 -250 mV
V
CEsat
collector-emitter
saturation voltage
I
C
= -10 A; I
B
= -1 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- -530 -800 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= -10 A; I
B
= -1 A; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
- 53 80 mΩ
I
C
= -1 A; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- - -0.9 V
I
C
= -5 A; I
B
= -0.5 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- - -1.1 V
V
BEsat
base-emitter saturation
voltage
I
C
= -10 A; I
B
= -1 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- - -1.3 V
V
BEon
base-emitter turn-on
voltage
V
CE
= -2 V; I
C
= -0.5 A; T
amb
= 25 °C - - -0.8 V
t
d
delay time - 20 - ns
t
r
rise time - 145 - ns
t
on
turn-on time - 165 - ns
t
s
storage time - 155 - ns
t
f
fall time - 80 - ns
t
off
turn-off time
V
CC
= -12.5 V; I
C
= -5 A;
I
Bon
= -250 mA; I
Boff
= 250 mA;
T
amb
= 25 °C
- 235 - ns
NXP Semiconductors
PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
PHPT61010PY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 20 March 2015 7 / 16
Symbol Parameter Conditions Min Typ Max Unit
f
T
transition frequency V
CE
= -10 V; I
C
= -500 mA;
f = 100 MHz; T
amb
= 25 °C
- 90 - MHz
C
c
collector capacitance V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 101 - pF
aaa-015932
200
300
100
400
500
h
FE
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
V
CE
= −2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 -5-4-2 -3-1
aaa-015933
-4
-6
-2
-8
-10
I
C
(A)
0
I
B
= -240 mA
-160
-100
-10
-5
-15
-20
-30
-50
-70
T
amb
= 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
NXP Semiconductors
PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
PHPT61010PY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 20 March 2015 8 / 16
aaa-014834
-0.6
-0.8
-0.4
-1.0
-1.2
V
BE
(V)
-0.2
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
V
CE
= −2 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
aaa-014835
-0.6
-0.8
-0.4
-1.0
-1.2
V
BEsat
(V)
-0.2
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
aaa-015936
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-015937
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
-10
-1
-1
V
CEsat
(V)
-10
-2
(3)
(1)
(2)
(4)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 20
(4) I
C
/I
B
= 10
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

PHPT61010PYX

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 100V 10A PNP High Power Transistor
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