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STPSC20H065CWY

P1-P3P4-P6P7-P9
This is information on a product in full production.
September 2014 DocID026619 Rev 2 1/9
STPSC20H065C-Y
Automotive 650 V power Schottky silicon carbide diode
Datasheet - production data
Features
• No or negligible reverse recovery
• Switching behavior independent of
temperature
• Dedicated to PFC applications
• High forward surge capability
• AEC-Q101 qualified
• ECOPACK
®
2 compliant component
• PPAP capable
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature and are ideal for automotive
applications.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
K (2)
A1 (1)
A2 (3)
A1
K
A2
A1
K
A2
TO-220AB
STPSC20H065CTY
TO-247
STPSC20H065CWY
Table 1. Device summary
Symbol Value
I
F(AV)
2 x 10 A
V
RRM
650 V
T
j
(max) 175 °C
www.st.com
Characteristics STPSC20H065C-Y
2/9 DocID026619 Rev 2
1 Characteristics
When the two diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 1.35 x I
F(AV)
+ 0.115 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 650
V
I
F(RMS)
Forward rms current 22 A
I
F(AV)
Average forward current T
c
= 135 °C
(1)
, DC, per diode 10
A
T
c
= 125 °C
(2)
, DC, per device 20
I
FSM
Surge non repetitive
forward current
t
p
= 10 ms sinusoidal, T
c
= 25 °C
t
p
= 10 ms sinusoidal, T
c
= 125 °C
t
p
= 10 µs square, T
c
= 25 °C
90
80
470
A
I
FRM
Repetitive peak forward
current
T
c
= 135 °C
(1)
, T
j
= 175 °C, δ = 0.1
41
A
T
stg
Storage temperature range -55 to +175 °C
T
j
Operating junction temperature
(3)
-40 to +175 °C
1. Value based on R
th(j-c)
max (per diode)
2. Value based on R
th(j-c)
max (per device)
3. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
------- --------
1
Rth j a–()
----------- ---------------
<
Table 3. Thermal resistance
Symbol Parameter
Value
Unit
Typ. Max.
R
th(j-c)
Junction to case per diode
Per diode
TO-247
1.25 1.5
°C/W
TO-220AB
Total
TO-247
0.83 0.95
TO-220AB
R
th(c)
Coupling 0.4
Table 4. Static electrical characteristics per diode
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-9100
µA
T
j
= 150 °C - 85 425
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 10 A
-1.561.75
V
T
j
= 150 °C - 1.98 2.5
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
DocID026619 Rev 2 3/9
STPSC20H065C-Y Characteristics
9
Table 5. Dynamic electrical characteristics per diode
Symbol Parameter Test conditions Typ. Unit
Q
cj
(1)
Total capacitive charge V
R
= 400 V 28.5 nC
C
j
Total capacitance
V
R
= 0 V, T
c
= 25 °C, F = 1 MHz 480
pF
V
R
= 400 V, T
c
= 25 °C, F = 1 MHz 48
1. Most accurate value for the capacitive charge:
Q = c
j
(v
R
).dv
R
cj
∫
V
OUT
0
Figure 1. Forward voltage drop versus forward
current (typical values per diode, low level)
Figure 2. Forward voltage drop versus forward
current (typical values per diode, high level)
A)I
FM
(
0
2
4
6
8
10
12
14
16
18
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
T
a
=150 °C
T
a
=175 °C
T
a
=25 °C
Pulse test : t
p
=500µs
T
a
=100 °C
V
FM
(V)
0
10
20
30
40
50
60
70
80
90
100
012345678
T
a
=150 °C
T
a
=175 °C
T
a
=25 °C
Pulse test : t
p
=500µs
T
a
=100 °C
I
FM
(A)
V
FM
(V)
Figure 3. Reverse leakage current versus
reverse voltage applied
(typical values per diode)
Figure 4. Peak forward current versus case
temperature (per diode)
I
R
(µA)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0 50 100 150 200 250 300 350 400 450 500 550 600 650
T
j
=25 °C
T
j
=150 °C
T
j
=175 °C
V
R
(V)
I
M
(A)
0
10
20
30
40
50
60
70
80
0 25 50 75 100 125 150 175
δ = 0.5
δ = 0.1
δ = 0.3
δ = 1
δ = 0.7
T
δ
=tp/T
tp
T
C
(°C)
P1-P3P4-P6P7-P9

STPSC20H065CWY

Mfr. #:
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Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
Lifecycle:
New from this manufacturer.
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