CREAT BY ART
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
50 100 150 200 300 400 500 600 V
V
RMS
35 70 105 140 210 280 350 420 V
V
DC
50 100 150 200 300 400 500 600 V
I
F(AV)
A
Trr ns
Cj pF
T
J
O
C
T
STG
O
C
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Document Number: DS_D1405024 Version: G14
SF31G thru SF38G
Taiwan Semiconductor
Glass Passivated Su
er Fast Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
UNIT
MECHANICAL DATA
Case: DO-201AD
DO-201AD
Weight: 1.1 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL
SF
31G
SF
32G
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
125
SF
34G
SF
35G
SF
36G
SF
37G
SF
38G
SF
33G
A
Maximum instantaneous forward voltage (Note 1)
@ 3 A
V
F
0.95 V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 3
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃
I
R
5
μA
100
Maximum reverse recovery time (Note 2)
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Typical junction capacitance (Note 3)
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
1.3 1.7
35
80 60
Typical thermal resistance
R
θjC
R
θjL
R
θjA
9
10
35
O
C/W
