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SQJ244EP-T1_GE3

P1-P3P4-P6P7-P9P10-P10
SQJ244EP
www.vishay.com
Vishay Siliconix
S18-0488-Rev. A, 07-May-2018
1
Document Number: 76423
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Optimized for synchronous buck applications
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
PRODUCT SUMMARY
N-CHANNEL 1 N-CHANNEL 2
V
DS
(V) 40 40
R
DS(on)
() at V
GS
= 10 V 0.0110 0.0045
R
DS(on)
() at V
GS
= 4.5 V 0.0150 0.0060
I
D
(A) 20 60
Configuration Dual
Package PowerPAK SO-8L Dual Asymmetric
PowerPAK
®
SO-8L Dual Asymmetric
Bottom View
2
G
1
3
S
2
4
G
2
1
S
1
D
2
D
1
Top View
1
6.15 mm
5
.13 mm
1
6.1
5
m
m
5
13
m
N-Channel 1 MOSFET
D
1
G
1
S
1
N-Channel 2 MOSFET
D
2
G
2
S
2
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Drain-source voltage V
DS
40 40
V
Gate-source voltage V
GS
± 20
Continuous drain current
T
C
= 25 °C
I
D
20
a
60
a
A
T
C
= 125 °C 20
a
44
Continuous source current (diode conduction) I
S
20
a
44
Pulsed drain current
b
I
DM
80 170
Single pulse avalanche current
L = 0.1 mH
I
AS
19 30
Single pulse avalanche energy E
AS
18 45 mJ
Maximum power dissipation
b
T
C
= 25 °C
P
D
27 48
W
T
C
= 125 °C 9 16
Operating junction and storage temperature range T
J
, T
stg
-55 to +175
°C
Soldering recommendations (peak temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Junction-to-ambient PCB mount
c
R
thJA
85 85
°C/W
Junction-to-case (drain) R
thJC
5.5 3.1
SQJ244EP
www.vishay.com
Vishay Siliconix
S18-0488-Rev. A, 07-May-2018
2
Document Number: 76423
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA N-Ch 1 40 - -
V
V
GS
= 0 V, I
D
= 250 μA N-Ch 2 40 - -
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA N-Ch 1 1.5 2.0 2.5
V
DS
= V
GS
, I
D
= 250 μA N-Ch 2 1.5 2.0 2.5
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
N-Ch 1 - - ± 100
nA
N-Ch 2 - - ± 100
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= 40 V N-Ch 1 - - 1
μA
V
GS
= 0 V V
DS
= 40 V N-Ch 2 - - 1
V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C N-Ch 1 - - 50
V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C N-Ch 2 - - 50
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C N-Ch 1 - - 250
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C N-Ch 2 - - 250
On-state drain current
a
I
D(on)
V
GS
= 10 V V
DS
5 V N-Ch 1 15 - -
A
V
GS
= 10 V V
DS
5 V N-Ch 2 30 - -
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 4 A N-Ch 1 -
0.00890 0.01100
V
GS
= 10 V I
D
= 10 A N-Ch 2 -
0.00365 0.00450
V
GS
= 10 V I
D
= 4 A, T
J
= 125 °C N-Ch 1 -
- 0.01600
V
GS
= 10 V I
D
= 10 A, T
J
= 125 °C N-Ch 2 -
- 0.00640
V
GS
= 10 V I
D
= 4 A, T
J
= 175 °C N-Ch 1 -
- 0.01890
V
GS
= 10 V I
D
= 10 A, T
J
= 175 °C N-Ch 2 -
- 0.00740
V
GS
= 4.5 V I
D
= 3 A N-Ch 1 -
0.01210 0.01500
V
GS
= 4.5 V I
D
= 8 A N-Ch 2 -
0.00490 0.00600
Forward transconductance
b
g
fs
V
DS
= 10 V, I
D
= 4 A N-Ch 1 -
26 -
S
V
DS
= 10 V, I
D
= 10 A N-Ch 2 -
73 -
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch 1 - 840 1200
pF
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch 2 - 2032 2800
Output capacitance C
oss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch 1 - 662 900
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch 2 - 1256 1700
Reverse transfer capacitance C
rss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch 1 - 29 40
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch 2 - 52 75
Total gate charge
c
Q
g
V
GS
= 10 V V
DS
= 20 V, I
D
= 2 A N-Ch 1 - 13 20
nC
V
GS
= 10 V V
DS
= 20 V, I
D
= 4 A N-Ch 2 - 28.5 45
Gate-source charge
c
Q
gs
V
GS
= 10 V V
DS
= 20 V, I
D
= 2 A N-Ch 1 - 2.4 -
V
GS
= 10 V V
DS
= 20 V, I
D
= 4 A N-Ch 2 - 5.2 -
Gate-drain charge
c
Q
gd
V
GS
= 10 V V
DS
= 20 V, I
D
= 2 A N-Ch 1 - 1.5 -
V
GS
= 10 V V
DS
= 20 V, I
D
= 4 A N-Ch 2 - 3.3 -
Gate resistance R
g
f = 1 MHz
N-Ch 1 0.55 1.16 1.8
N-Ch 2 0.25 0.54 0.85
SQJ244EP
www.vishay.com
Vishay Siliconix
S18-0488-Rev. A, 07-May-2018
3
Document Number: 76423
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Dynamic
b
Turn-on delay time
c
t
d(on)
V
DD
= 20 V, R
L
= 10 ,
I
D
2 A, V
GEN
= 10 V, R
g
= 1
N-Ch 1 - 10 15
ns
V
DD
= 20 V, R
L
= 5 ,
I
D
4 A, V
GEN
= 10 V, R
g
= 1
N-Ch 2 - 15 25
Rise time
c
t
r
V
DD
= 20 V, R
L
= 10 ,
I
D
2 A, V
GEN
= 10 V, R
g
= 1
N-Ch 1 - 4 10
V
DD
= 20 V, R
L
= 5 ,
I
D
4 A, V
GEN
= 10 V, R
g
= 1
N-Ch 2 - 4 10
Turn-off delay time
c
t
d(off)
V
DD
= 20 V, R
L
= 10 ,
I
D
2 A, V
GEN
= 10 V, R
g
= 1
N-Ch 1 - 19 30
V
DD
= 20 V, R
L
= 5 ,
I
D
4 A, V
GEN
= 10 V, R
g
= 1
N-Ch 2 - 26 40
Fall time
c
t
f
V
DD
= 20 V, R
L
= 10 ,
I
D
2 A, V
GEN
= 10 V, R
g
= 1
N-Ch 1 - 9 15
V
DD
= 20 V, R
L
= 5 ,
I
D
4 A, V
GEN
= 10 V, R
g
= 1
N-Ch 2 - 9 15
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
N-Ch 1 - - 80
A
N-Ch 2 - - 170
Forward voltage V
SD
I
F
= 4 A, V
GS
= 0 V N-Ch 1 - 0.78 1.2
V
I
F
= 10 A, V
GS
= 0 V N-Ch 2 - 0.78 1.2
Body diode reverse recovery time t
rr
I
F
= 4 A, di/dt = 100 A/μs N-Ch 1 - 38 80
ns
I
F
= 5 A, di/dt = 100 A/μs N-Ch 2 - 54 110
Body diode reverse recovery charge Q
rr
I
F
= 4 A, di/dt = 100 A/μs N-Ch 1 - 23 50
nC
I
F
= 5 A, di/dt = 100 A/μs N-Ch 2 - 61 125
Reverse recovery fall time t
a
I
F
= 4 A, di/dt = 100 A/μs N-Ch 1 - 13 -
ns
I
F
= 5 A, di/dt = 100 A/μs N-Ch 2 - 29 -
Reverse recovery rise time t
b
I
F
= 4 A, di/dt = 100 A/μs N-Ch 1 - 25 -
I
F
= 5 A, di/dt = 100 A/μs N-Ch 2 - 25 -
Body diode peak reverse recovery
current
I
RM(REC)
I
F
= 4 A, di/dt = 100 A/μs N-Ch 1 - -1 -
A
I
F
= 5 A, di/dt = 100 A/μs N-Ch 2 - -1.8 -
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
P1-P3P4-P6P7-P9P10-P10

SQJ244EP-T1_GE3

Mfr. #:
Buy SQJ244EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V Vds -/+20V Vgs PowerPAK SO-8L
Lifecycle:
New from this manufacturer.
Delivery:
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