BTW69-1200RG

®
1/6
Table 1: Main Features
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V
RMS
), complying
with UL standards (file ref: E81734).
Symbol Value Unit
I
T(RMS)
50 A
V
DRM
/V
RRM
600 to 1200 V
I
GT
80 mA
BTW67 and BTW69 Series
50A SCRS
REV. 5February 2006
STANDARD
Table 2: Order Codes
Part Numbers Marking
BTW67-xxx BTW67xxx
BTW69-xxxRG BTW69xxx
A
K
G
K
A
G
A
K
G
RD91
(BTW67)
TOP3 Ins.
(BTW69)
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(180° conduction angle)
RD91
T
c
= 70°C
50 A
TOP3 Ins.
T
c
= 75°C
IT
(AV)
Average on-state current
(180° conduction angle)
RD91
T
c
= 70°C
32 A
TOP3 Ins.
T
c
= 75°C
I
TSM
Non repetitive surge peak on-state current
t
p
= 8.3 ms
T
j
= 25°C
610
A
t
p
= 10 ms
580
I
²
tI
²
t Value for fusing
T
j
= 25°C
1680
A
2
S
dI/dt
Critical rate of rise of on-state current I
G
= 2
x I
GT
, t
r
100 ns
F = 60 Hz
T
j
= 125°C
50 A/µs
I
GM
Peak gate current
t
p
= 20 µs T
j
= 125°C
8A
P
G(AV)
Average gate power dissipation
T
j
= 125°C
1W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage 5 V
BTW67 and BTW69 Series
2/6
Tables 4: Electrical Characteristics (T
j
= 25°C, unless otherwise specified)
Table 5: Thermal resistance
Symbol Test Conditions Value Unit
I
GT
V
D
= 12 V R
L
= 33
MIN. 8
mA
MAX. 80
V
GT
MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 k T
j
= 125°C
MIN. 0.2 V
I
H
I
T
= 500 mA Gate open
MAX. 150 mA
I
L
I
G
= 1.2 x I
GT
MAX. 200 mA
dV/dt
V
D
= 67 % V
DRM
Gate open T
j
= 125°C
MIN. 1000 V/µs
V
TM
I
TM
= 100 A tp = 380 µs T
j
= 25°C
MAX. 1.9 V
V
t0
Threshold voltage
T
j
= 125°C
MAX. 1.0 V
R
d
Dynamic resistance
T
j
= 125°C
MAX. 8.5 m
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25°C
MAX.
10 µA
T
j
= 125°C
5mA
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (D.C.)
RD91 (Insulated) 1.0
°C/W
TOP3 Insulated 0.9
R
th(j-a)
Junction to ambient (D.C.) TOP3 Insulated 50 °C/W
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and D.C. on-state current
versus case temperature
0 5 10 15 20 25 30 35
0
5
10
15
20
25
30
35
40
45
50
55
P(W)
I (A)
T(AV)
α = 180°
360°
α
0 25 50 75 100 125
0
10
20
30
40
50
60
I (A)
T(AV)
T (°C)
case
α
= 180°
D.C.
BTW69
BTW69
BTW67
BTW67
BTW67 and BTW69 Series
3/6
Figure 3: Relative variation of thermal
impedance versus pulse duration
Figure 4: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature
Figure 5: Surge peak on-state current versus
number of cycles
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
Figure 7: On-state characteristics (maximum
values)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-3
1E-2
1E-1
1E+0
K=[Z /R
th th
]
t (s)
p
Z
th(j-c)
Z
th(j-a)
BTW69
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
T (°C)
j
I,I,I[T] /
GT H L j
I ,I ,I [T =25°C]
GT H L j
I
GT
I
H
& I
L
1 10 100 1000
0
50
100
150
200
250
300
350
400
450
500
550
600
I (A)
TSM
Number of cycles
Non repetitive
T initial=25°C
j
Repetitive
T =75°C
C
t =10ms
p
One cycle
0.01 0.10 1.00 10.00
100
1000
5000
I (A), I t (A s)
TSM
22
t (ms)
p
I t
2
I
TSM
T initial = 25°C
j
dI/dt limitation
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
600
I (A)
TM
V (V)
TM
T
j
=max
T =25°C
j
V =1.0V
R =8.5m
T max.:
j
t0
d

BTW69-1200RG

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
SCRs 50 Amp 1200 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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