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BUK7628-100A/C,118

P1-P3P4-P6P7-P9P10-P12P13-P14
BUK7628-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 26 April 2011 6 of 13
NXP Semiconductors
BUK7628-100A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
= 25 °C 100 - - V
I
D
=0.25mA; V
GS
=0V; T
j
= -55 °C 89 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C 234V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C --4.4V
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C 1 - - V
I
DSS
drain leakage current V
DS
=100V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=100V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
= 175 °C - - 76 mΩ
V
GS
=10V; I
D
=25A; T
j
= 25 °C - 20 28 mΩ
Dynamic characteristics
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C
- 2320 3100 pF
C
oss
output capacitance - 315 378 pF
C
rss
reverse transfer
capacitance
- 187 256 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=10V;
R
G(ext)
10 Ω; T
j
=25°C
- 1523ns
t
r
rise time V
DS
=30V; R
L
=1.2Ω; V
GS
=10V;
R
G(ext)
=10Ω; T
j
=25°C
- 70 105 ns
t
d(off)
turn-off delay time - 83 116 ns
t
f
fall time - 4563ns
L
D
internal drain
inductance
from upper edge of drain tab to centre of
die; T
j
=25°C
-2.5-nH
from drain lead 6 mm from package to
centre of die; T
j
=25°C
-4.5-nH
L
S
internal source
inductance
from source lead to source bond pad;
T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
= 25 °C - 0.85 1.2 V
I
S
=47A; V
GS
=0V; T
j
=25°C - 1.1 - V
t
rr
reverse recovery time I
S
=47A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=30V; T
j
=25°C
-66-ns
Q
r
recovered charge - 0.24 - µC
BUK7628-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 26 April 2011 7 of 13
NXP Semiconductors
BUK7628-100A
N-channel TrenchMOS standard level FET
T
j
= 25 °C T
j
= 25 °C
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
T
j
= 25 °C; I
D
= 25 A V
DS
> I
D
x R
DSon
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
V
DS
> I
D
x R
DSon
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
160
80
120
40
200
I
D
(A)
0
V
DS
(V)
0108462
003aaf157
V
GS (V)
= 20
13.5
10.0
9.0
8.0
7.5
7.0
5.5
6.5
6.0
5.0
4.5
003aaf158
I
D
(A)
5 1258545
35
45
25
55
65
R
DS(on)
(mΩ)
15
V
GS
(V) = 10
6.0
6.5
7.0
7.5
8.0
5.5
15
27
23
19
31
R
DS(on)
(mΩ)
V
GS
(V)
515139117
003aaf159
40
60
20
80
100
I
D
(A)
0
V
GS
(V)
08642
003aaf160
T
j
= 25 °CT
j
= 175 °C
10
30
50
20
40
g
fs
(S)
0
I
D
(A)
0 1008040 6020
003aaf161
1.0
0.5
1.5
2.0
a
0
003aaf162
T
j
(°C)
−100 2000 100
BUK7628-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 26 April 2011 8 of 13
NXP Semiconductors
BUK7628-100A
N-channel TrenchMOS standard level FET
I
D
= 1 mA; V
DS
= V
GS
T
j
= 25 °C; V
DS
= V
GS
Fig 13. Gate-source threshold voltage as a function of
junction temperature
Fig 14. Sub-threshold drain current as a function of
gate-source voltage
V
GS
= 0 V; f = 1 MHz T
j
= 25 °C; I
D
= 25 A
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Gate-source voltage as a function of gate
charge; typical values
V
GS
= 0 V
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
0
4
3
2
1
5
V
GS(th)
(V)
003aaf163
T
j
(°C)
−100 2001000
maximum
typical
minimum
003aaf164
V
GS
(V)
054231
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
98 %
typical
2 %
003aaf165
V
DS
(V)
10
−2
10
2
1010
−1
1
2
3
1
4
5
C
(nF)
0
C
iss
C
oss
C
rss
003aaf166
Q
G
(nC)
0 15010050
4
6
2
8
10
V
GS
(V)
0
V
DD
= 44 VV
DD
= 14 V
20
40
80
60
100
I
F
(A)
0
003aaf167
V
SDS
(V)
0 0.2 1.41.00.8 1.20.60.4
T
j
= 25 °CT
j
= 175 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK7628-100A/C,118

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Buy BUK7628-100A/C,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 100V D2PAK
Lifecycle:
New from this manufacturer.
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