1N4148
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 16-Jul-12
1
Document Number: 81857
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diodes
MECHANICAL DATA
Case: DO-35
Weight: approx. 105 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• Silicon epitaxial planar diode
• Electrically equivalent diodes:
1N4148 - 1N914
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
PARTS TABLE
PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS
1N4148 1N4148-TAP or 1N4148-TR V4148 Single diode Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
100 V
Reverse voltage V
R
75 V
Peak forward surge current t
p
= 1 μs I
FSM
2A
Repetitive peak forward current I
FRM
500 mA
Forward continuous current I
F
300 mA
Average forward current V
R
= 0 I
F(AV)
150 mA
Power dissipation
l = 4 mm, T
L
= 45 °C P
tot
440 mW
l = 4 mm, T
L
25 °C P
tot
500 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, T
L
= constant R
thJA
350 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
- 65 to + 150 °C
