FR302G B0G

CREAT BY ART
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
t
rr
250 ns
C
J
pF
R
θJA
°C/W
T
J
°C
T
STG
°C
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Document Number: DS_D1410036 Version: G15
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Maximum reverse recovery time (Note 2) 150 500
Typical junction capacitance (Note 3) 30
Typical thermal resistance 35
A
Maximum instantaneous forward voltage (Note 1)
@ 3 A
V
F
1.3 V
I
R
5
μA
100
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
125
FR
304G
FR
305G
FR
306G
FR
307G
UNIT
Maximum repetitive peak reverse voltage
MECHANICAL DATA
Case: DO-201AD
DO-201AD
Weight: 1.2 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL
FR
301G
FR
302G
FR
303G
FR301G - FR307G
Taiwan Semiconductor
3A, 50V - 1000V Glass Passivated Fast Recover
y
Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
CREAT BY ART
PART NO.
PART NO.
(T
A
=25°C unless otherwise noted)
Document Number: DS_D1410036 Version: G15
AEC-Q101 qualified
Green compound
FR307GHA0G FR307G H A0 G
Note 1: "xx" defines voltage from 50V (FR301G) to 1000V (FR307G)
EXAMPLE
PREFERRED
PART NO.
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
1,250 / 13" Paper reel
B0 DO-201AD 500 / Bulk packing
X0 DO-201AD Forming
PACKAGE PACKING
FR30xG
(Note 1)
H
A0
G
DO-201AD 500 / Ammo box
R0 DO-201AD
RATINGS AND CHARACTERISTICS CURVES
FR301G - FR307G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SUFFIX
PACKING CODE PACKING CODE
SUFFIX
0
1
2
3
4
0 25 50 75 100 125 150 175
AVERAGE FORWARD CURRENT (A)
AMBIENT TEMPERATURE (
o
C)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
10
100
1000
1 10 100
PEAK FORWARD SURGE CURRENT(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
8.3ms Single Half Sine Wave
0.1
1
10
100
1000
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
T
J
=25°C
T
J
=125°C
T
J
=75°C
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4 1.6
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
CREAT BY ART
Min Max Min Max
A 5.00 5.60 0.197 0.220
B 1.20 1.30 0.048 0.052
C 25.40 - 1.000 -
D 8.50 9.50 0.335 0.375
E 25.40 - 1.000 -
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1410036 Version: G15
MARKING DIAGRAM
DO-201AD
FR301G - FR307G
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
10
100
1 10 100
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p

FR302G B0G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
DIODE GEN PURP 100V 3A DO201AD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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