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SQ7415AENW-T1_GE3

P1-P3P4-P6P7-P8
SQ7415AENW
www.vishay.com
Vishay Siliconix
S15-2138, Rev. A, 14-Sep-15
1
Document Number: 76598
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Low thermal resistance PowerPAK
®
1212-8W
package with 1.07 mm profile
• AEC-Q101 qualified
• Wettable flank terminals
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) -60
R
DS(on)
(Ω) at V
GS
= -10 V 0.065
R
DS(on)
(Ω) at V
GS
= -4.5 V 0.090
I
D
(A) -16
Configuration Single
Package PowerPAK 1212-8W
PowerPAK
®
1212-8W Single
Top View
1
3.3 mm
3.3 mm
3.3 mm
3
mm
Bottom View
1
S
2
S
3
S
4
G
D
8
D
7
D
6
D
5
1
S
2
S
3
S
7
D
6
D
5
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
a
I
D
-16
A
T
C
= 125 °C -11
Continuous Source Current (Diode Conduction)
a
I
S
-16
Pulsed Drain Current
b
I
DM
-64
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
-23
Single Pulse Avalanche Energy E
AS
26 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
53
W
T
C
= 125 °C 17
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175
°C
Soldering Recommendations (Peak Temperature)
d
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
81
°C/W
Junction-to-Case (Drain) R
thJC
2.8
SQ7415AENW
www.vishay.com
Vishay Siliconix
S15-2138, Rev. A, 14-Sep-15
2
Document Number: 76598
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -60 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1.5 -2.0 -2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= -60 V - - -1
μA V
GS
= 0 V V
DS
= -60 V, T
J
= 125 °C - - -50
V
GS
= 0 V V
DS
= -60 V, T
J
= 175 °C - - -150
On-State Drain Current
a
I
D(on)
V
GS
= -10 V V
DS
≤ -5 V -15 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V I
D
= -5.7 A - 0.050 0.065
Ω
V
GS
= -10 V I
D
= -5.7 A, T
J
= 125 °C - - 0.112
V
GS
= -10 V I
D
= -5.7 A, T
J
= 175 °C - - 0.138
V
GS
= -4.5 V I
D
= -4.4 A, - 0.070 0.090
Forward Transconductance
b
g
fs
V
DS
= -15 V, I
D
= -5.7 A - 13 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= -25 V, f = 1 MHz
- 1108 1385
pF Output Capacitance C
oss
- 132 165
Reverse Transfer Capacitance C
rss
-84105
Total Gate Charge
c
Q
g
V
GS
= -10 V V
DS
= -30 V, I
D
= -5.7 A
-25.538
nC Gate-Source Charge
c
Q
gs
-3.6-
Gate-Drain Charge
c
Q
gd
-6.7-
Gate Resistance R
g
f = 1 MHz 3 6 9 Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= -30 V, R
L
= 30 Ω
I
D
≅ -1 A, V
GEN
= -10 V, R
g
= 1 Ω
-914
ns
Rise Time
c
t
r
-914
Turn-Off Delay Time
c
t
d(off)
-3756
Fall Time
c
t
f
-812
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
---64A
Forward Voltage V
SD
I
F
= -6 A, V
GS
= 0 V - -0.85 -1.2 V
SQ7415AENW
www.vishay.com
Vishay Siliconix
S15-2138, Rev. A, 14-Sep-15
3
Document Number: 76598
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
4
8
12
16
20
0 1 2 3 4 5
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 5 V
V
GS
= 3 V
V
GS
= 4 V
V
GS
= 2 V
0.0
0.4
0.8
1.2
1.6
2.0
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25
°
C
T
C
= - 55 °C
T
C
= 125 °C
0.00
0.05
0.10
0.15
0.20
0.25
0 4 8 12 16 20
R
DS(on)
-On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
3
6
9
12
15
18
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0
4
8
12
16
20
0 3 6 9 12 15
g
fs
-Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
400
800
1200
1600
2000
0 10 20 30 40 50 60
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P8

SQ7415AENW-T1_GE3

Mfr. #:
Buy SQ7415AENW-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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