2016-01-31 2
Version 1.4 / OS-IN-2015-033 SFH 3219
Maximum Ratings (T
A
= 25 °C)
Characteristics (T
A
= 25 °C)
Parameter Symbol Values Unit
Operating and storage temperature range T
op
; T
stg
-40 ... 100 °C
Collector-emitter voltage V
CE
35 V
Collector current I
C
15 mA
Collector surge current
(τ < 10 µs)
I
CS
75 mA
Total Power dissipation P
tot
165 mW
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
V
ESD
2000 V
Thermal resistance for mounting on pcb R
thJA
450 K/W
Parameter Symbol Values Unit
Wavelength of max. sensitivity (typ) λ
S max
990 nm
Spectral range of sensitivity (typ) λ
10%
(typ) 450
... 1150
nm
Radiant sensitive area (typ) A 0.038 mm
2
Dimensions of chip area (typ) L x W (typ) 0.45 x
0.45
mm x
mm
Half angle (typ) ϕ ± 25 °
Capacitance
(V
CE
= 0 V, f = 1 MHz, E = 0)
(typ) C
CE
5 pF
Photocurrent
(λ = 950 nm, E
e
= 0.1 mW/cm
2
, V
CE
= 5 V)
I
PCE
≥ 63 µA
Dark current
(V
CE
= 20 V, E = 0)
(typ (max)) I
CE0
1 (≤ 50) nA
Rise and fall time
(I
C
= 1 mA, V
CC
= 5 V, R
L
= 1 kΩ)
(typ) t
r
, t
f
7 µs
Collector-emitter saturation voltage
(I
C
= 20 μA, E
e
= 0.1 mW/cm
2
)
(typ) V
CEsat
150 mV
