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74HC1G32GW,125

P1-P3P4-P6P7-P9P10-P12
74HC_HCT1G32_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 14 March 2008 3 of 11
NXP Semiconductors
74HC1G32; 74HCT1G32
2-input OR gate
7. Functional description
8. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] Above 55 °C the value of P
tot
derates linearly with 2.5 mW/K.
9. Recommended operating conditions
Table 4. Function table
H = HIGH voltage level; L = LOW voltage level
Inputs Output
A B Y
LLL
LHH
HLH
HHH
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
[1]
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +7.0 V
I
IK
input clamping current V
I
< −0.5 V or V
I
>V
CC
+ 0.5 V - ±20 mA
I
OK
output clamping current V
O
< −0.5 V or V
O
>V
CC
+ 0.5 V - ±20 mA
I
O
output current −0.5 V < V
O
<V
CC
+ 0.5 V - ±12.5 mA
I
CC
supply current - 25 mA
I
GND
ground current −25 - mA
T
stg
storage temperature −65 +150 °C
P
tot
total power dissipation T
amb
= −40 °C to +125 °C
[2]
- 200 mW
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 74HC1G32 74HCT1G32 Unit
Min Typ Max Min Typ Max
V
CC
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
V
I
input voltage 0 - V
CC
0-V
CC
V
V
O
output voltage 0 - V
CC
0-V
CC
V
T
amb
ambient temperature −40 +25 +125 −40 +25 +125 °C
∆t/∆V input transition rise
and fall rate
V
CC
= 2.0 V - - 625 - - - ns/V
V
CC
= 4.5 V - - 139 - - 139 ns/V
V
CC
= 6.0 V - - 83 - - - ns/V
74HC_HCT1G32_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 14 March 2008 4 of 11
NXP Semiconductors
74HC1G32; 74HCT1G32
2-input OR gate
10. Static characteristics
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
=25
°
C.
Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
74HC1G32
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V 1.5 1.2 - 1.5 - V
V
CC
= 4.5 V 3.15 2.4 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V - 0.8 0.5 - 0.5 V
V
CC
= 4.5 V - 2.1 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
I
O
= −20 µA; V
CC
= 2.0 V 1.9 2.0 - 1.9 - V
I
O
= −20 µA; V
CC
= 4.5 V 4.4 4.5 - 4.4 - V
I
O
= −20 µA; V
CC
= 6.0 V 5.9 6.0 - 5.9 - V
I
O
= −2.0 mA; V
CC
= 4.5 V 4.13 4.32 - 3.7 - V
I
O
= −2.6 mA; V
CC
= 6.0 V 5.63 5.81 - 5.2 - V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20 µA; V
CC
= 2.0 V - 0 0.1 - 0.1 V
I
O
= 20 µA; V
CC
= 4.5 V - 0 0.1 - 0.1 V
I
O
= 20 µA; V
CC
= 6.0 V - 0 0.1 - 0.1 V
I
O
= 2.0 mA; V
CC
= 4.5 V - 0.15 0.33 - 0.4 V
I
O
= 2.6 mA; V
CC
= 6.0 V - 0.16 0.33 - 0.4 V
I
I
input leakage current V
I
=V
CC
or GND; V
CC
= 6.0 V - - 1.0 - 1.0 µA
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
= 6.0 V
- - 10 - 20 µA
C
I
input capacitance - 1.5 - - - pF
74HCT1G32
V
IH
HIGH-level input
voltage
V
CC
= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - V
V
IL
LOW-level input
voltage
V
CC
= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= −20 µA 4.4 4.5 - 4.4 - V
I
O
= −2.0 mA 4.13 4.32 - 3.7 - V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 µA - 0 0.1 - 0.1 V
I
O
= 2.0 mA - 0.15 0.33 - 0.4 V
I
I
input leakage current V
I
=V
CC
or GND; V
CC
= 5.5 V - - 1.0 - 1.0 µA
74HC_HCT1G32_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 14 March 2008 5 of 11
NXP Semiconductors
74HC1G32; 74HCT1G32
2-input OR gate
11. Dynamic characteristics
[1] t
pd
is the same as t
PLH
and t
PHL
.
[2] C
PD
is used to determine the dynamic power dissipation P
D
(µW).
P
D
=C
PD
× V
CC
2
× f
i
+ ∑ (C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz
f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in V
∑ (C
L
× V
CC
2
× f
o
) = sum of outputs
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
= 5.5 V
- - 10 - 20 µA
∆I
CC
additional supply
current
per input; V
CC
= 4.5 V to 5.5 V;
V
I
=V
CC
− 2.1 V; I
O
=0A
- - 500 - 850 µA
C
I
input capacitance - 1.5 - - - pF
Table 7. Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
=25
°
C.
Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Table 8. Dynamic characteristics
GND = 0 V; t
r
= t
f
≤
6.0 ns. All typical values are measured at T
amb
=25
°
C. For test circuit see Figure 6
Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
74HC1G32
t
pd
propagation delay A and B to Y; see Figure 5
[1]
V
CC
= 2.0 V; C
L
= 50 pF - 18 115 - 135 ns
V
CC
= 4.5 V; C
L
=50pF - 8 23 - 27 ns
V
CC
= 5.0 V; C
L
=15pF - 8 - - - ns
V
CC
= 6.0 V; C
L
=50pF - 7 20 - 23 ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
[2]
-19- - -pF
74HCT1G32
t
pd
propagation delay A and B to Y; see Figure 5
[1]
V
CC
= 4.5 V; C
L
= 50 pF - 10 24 - 27 ns
V
CC
= 5.0 V; C
L
=15pF - 10 - - - ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
− 1.5 V
[2]
-20- - -pF
P1-P3P4-P6P7-P9P10-P12

74HC1G32GW,125

Mfr. #:
Buy 74HC1G32GW,125
Manufacturer:
Nexperia
Description:
Logic Gates 2-INPUT OR GATE
Lifecycle:
New from this manufacturer.
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