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FR12M05

P1-P2
V
RRM
= 100 V - 1000 V
I
F
= 12 A
Features
• High Surge Capability DO-4 Package
• Types up to 1000 V V
RRM
Parameter Symbol FR12K(R)05 Unit
Re
p
etitive
p
eak reverse
V
800
V
FR12K05 thru FR12MR05
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions FR12M(R)05
1000
Silicon Fast
Recover
y
Diode
pp
voltage
V
RRM
800
V
RMS reverse voltage
V
RMS
560 V
DC blocking voltage
V
DC
800 V
Continuous forward current
I
F
12 A
Operating temperature
T
j
-65 to 150 °C
Storage temperature
T
stg
-65 to 175 °C
Parameter Symbol FR12K(R)05 Unit
Diode forward voltage 1.4
25 μA
6mA
Recovery Time
Maximum reverse recovery
time
T
RR
500 nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
2.0 °C/W
2.0
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 100 V, T
j
= 150 °
C
V1.4
25
6
500
V
R
= 100 V, T
j
= 25 °C
I
F
= 12 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
180
T
C
= 25 °C, t
p
= 8.3 ms
1000
700
1000
12
Reverse current
I
R
V
F
FR12M(R)05
-65 to 175
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
A180
-65 to 150
www.genesicsemi.com
1
FR12K05 thru FR12MR05
www.genesicsemi.com
2
P1-P2

FR12M05

Mfr. #:
Buy FR12M05
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 1000V 12A Fast Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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