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BYW100-200

P1-P3P4-P5
1/5
BYW100-200
October 2001 - Ed: 4B
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
®
Low voltage drop and rectifier suited for switching
mode base drive and transistor circuits.
DESCRIPTION
■
Very low conduction losses
■
Negligible switching losses
■
Low forward and reverse recovery times
■
The specifications and curves enable the
determination of trr and I
RM
at 100°C under
users conditions.
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
200 V
I
FRM
Repetitive peak forward current * tp = 5µs F = 1KHz
80 A
I
F(AV)
Average forward current* Ta = 95°C δ = 0.5
1.5 A
I
FSM
Surge non repetitive forward current tp=10 ms Sinusoidal
50 A
T
stg
Storage temperature range
-65 +150 °C
Tj
Maximum operating junction temperature
+ 150 °C
T
L
Maximum lead temperature for soldering during 10s at 4mm from
case
230 °C
* On infinitive heatsink with 10mm lead length
ABSOLUTE RATINGS (limiting values)
I
F(AV)
1.5 A
V
RRM
200 V
Tj (max) 150 °C
V
F
(max) 0.85 V
MAIN PRODUCT CHARACTERISTICS
DO-15
BYW100-200
BYW100-200
2/5
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage current Tj = 25°C V
R
=V
RRM
10 µA
Tj = 100°C
0.5 mA
V
F
**
Forward voltage drop Tj = 25°CI
F
= 4.5A
1.2 V
Tj = 100°C I
F
= 1.5A
0.78 0.85
Pulse test:*tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.75xI
F(AV)
+ 0.075 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr
I
F
=1A dI
F
/dt = - 50A/µs V
R
= 30V Tj = 25°C
35 ns
tfr
I
F
= 1.5A dI
F
/dt = - 50A/µs
Measured at 1.1 x V
F
max
Tj = 25°C
30 ns
V
FP
I
F
= 1.5A dI
F
/dt = - 50A/µs Tj = 25°C
5V
Qrr
I
F
= 1.5A dI
F
/dt = - 20A/µs V
R
≤ 30V Tj = 25°C
10 nC
RECOVERY CHARACTERISTICS
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient*
45 °C/W
* On infinite heatsink with 10mm lead length.
THERMAL RESISTANCES
BYW100-200
3/5
5 10152025
0
10
20
30
40
50
60
70
80
90
100
110
Rth(°C/W)
Rth(j-a)
Rth(j-l)
Lleads(mm)
Fig. 3: Thermal resistance versus lead length.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
0.10
1.00
10.00
50.00
IFM(A)
Tj=25°C
Tj=100°C
Tj=100°C
(Typical values)
VFM(V)
Fig. 5: Forward voltage drop versus forward
current (maximum values).
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
Single pulse
δ = 0.1
δ = 0.2
δ = 0.5
tp(s)
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu) = 35µm).
1 10 100 200
1
2
5
10
20
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
PF(av)(W)
δ = 0.2
δ = 0.5
δ = 1
δ = 0.05
δ = 0.1
T
δ
=tp/T
tp
IF(av) (A)
Fig. 1: Average forward power dissipation versus
average forward current.
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
IF(av)(A)
Rth(j-a)=100°C/W
Rth(j-a)=Rth(j-l)
Tamb(°C)
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
P1-P3P4-P5

BYW100-200

Mfr. #:
Buy BYW100-200
Manufacturer:
STMicroelectronics
Description:
Rectifiers 1.5 Amp 200 Volt
Lifecycle:
New from this manufacturer.
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