V
RRM
= 20 V - 100 V
I
F
= 200 A
Features
• High Surge Capability D-67 Package
• Types up to 100 V V
RRM
Parameter Symbol MBRH20045 (R) MBRH20060 (R) Unit
Repetitive peak reverse
MBRH20045 thru MBRH200100R
MBRH200100 (R)
MBRH20080 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottk
Diode
Conditions
voltage
RRM
RMS reverse voltage
V
RMS
32 42 V
DC blocking voltage
V
DC
45 60 V
Continuous forward current
I
F
200 200 A
Operating temperature
T
j
-40 to 175 -40 to 175 °C
Storage temperature
T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol MBRH20045 (R) MBRH20060 (R) Unit
Diode forward voltage 0.65 0.75
55
250 250
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
0.8 0.8 °C/W
250
A3000
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
V
R
= 20 V, T
j
= 25 °C
I
F
= 200 A, T
j
= 25 °C
T
C
≤ 136 °C
Conditions
56
3000 3000
-40 to 175
200 200
3000
-40 to 175
MBRH200100 (R)
55
MBRH20080 (R)
0.8
V
R
= 20 V, T
j
= 125 °C
0.8
0.84 0.84
250
mA
V
-40 to 175 -40 to 175
T
C
= 25 °C, t
p
= 8.3 ms
70
10080
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