2SC5916
Transistor
2/3
!
!!
!Electrical characteristics (Ta=25°C)
Parameter Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
fT
h
FE
C
ob
T
on
Min.
30
30
6
−
−
−
120
−
−
−
−
−
−
−
250
−−
15
25
−
−
−
1.0
1.0
−
200
400
390
−
−
−
V
I
C
=100µA
I
C
=1mA
I
E
=100µA
V
CD
=2V, I
C
=100mA
V
CB
=20V
V
EB
=4V
I
C
=1.0A, I
B
=0.1A
I
C
=2A
I
B1
=200mA
I
B2
=−200mA
V
CC
−25V
V
CE
=10V, I
E
=−100mA, f=10MHz
V
CB
=10V, I
E
=0, f=1MHz
V
V
µA
µA
MHz
mV
pF
ns
T
stg
−
100
−
ns
Tf
−
20
−
ns
Typ. Max.
Unit
Conditions
Collector−base breakdown voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Emitter cut-off current
Collector−emitter staturation voltage
Collector−emitter breakdown voltage
Emitter−base breakdown voltage
!
!!
!
h
FE
RANK
QR
120-270 180-390
!
!!
!Electrical characteristic curves
Fig.1 Safe operating area
COLLECTOR EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Single non repoetitive pulse
DC
1ms
10ms
1100.1 100
10
1
0.1
0.01
100ms
Fig.2 Switching Time
1
0.01 0.1
10
1000
100
10
COLLECTOR CURRENT : I
C
(A)
SWITCHING TIME (ns)
Ta=25°C
V
CC
=25V
I
C
/I
B
=10/1
Tstg
Tf
Ton
Fig.3 DC current gain vs. collector
current
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
0.001 0.01 0.1 101
1
10
100
1000
Ta=125°C
Ta=25°C
Ta=−40°C
V
CE
=2V
0.001 0.01 0.1 101
1
10
100
1000
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
V
CE
=5V
V
CE
=3V
V
CE
=2V
Fig.4 DC current gain vs. collector
current
Ta=25°C
0.001 0.01 0.1
0.01
0.1
1
10
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat)(V)
COLLECTOR CURRENT : I
C
(A)
101
Fig.5 Collector-emitter saturation voltage
vs. collector current
IC/IB=10/1
Ta=125°C
Ta=25°C
Ta=−40°C
0.001 0.10.01 101
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat)(V)
Fig.6 Collector-emitter saturation voltage
vs. collector current
I
C
/I
B
=10/1
I
C
/I
B
=20/1
Ta=25°C
