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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/13/2007
IS62WV51216ALL, IS62WV51216BLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions VDD Min. Max. Unit
VOH Output HIGH Voltage IOH = -0.1 mA 1.65-2.2V 1.4 — V
IOH = -1 mA 2.5-3.6V 2.2 — V
VOL Output LOW Voltage IOL = 0.1 mA 1.65-2.2V — 0.2 V
IOL = 2.1 mA 2.5-3.6V — 0.4 V
VIH Input HIGH Voltage 1.65-2.2V 1.4 VDD + 0.2 V
2.5-3.6V 2.2 VDD + 0.3 V
VIL
(1)
Input LOW Voltage 1.65-2.2V –0.2 0.4 V
2.5-3.6V –0.2 0.6 V
ILI Input Leakage GND ≤ VIN ≤ VDD –1 1 µA
ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –1 1 µA
Notes:
1. VIL (min.) = –1.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.2 to VDD+0.3 V
TBIAS Temperature Under Bias –40 to +85 °C
VDD VDD Related to GND –0.2 to +3.8 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.0 W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
