OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

HD1750FX

P1-P3P4-P6P7-P8
1/8December 2005
■ STATE-OF-THE-ART TECHNOLOGY:
DIFFUSED COLLECTOR "ENHANCED
GENERATION" EHVS1
■ WIDER RANGE OF OPTIMUM DRIVE
CONDITIONS
■ LESS SENSITIVE TO OPERATING
TEMPERATURE VARIATION
■ FULLY INSULATED POWER PACKAGE U.L.
COMPLIANT
APPLICATIONS
■ HORIZONTAL DEFLECTION OUTPUT FOR
DIGITAL TV, HDTV AND HIGH-END
MONITORS
DESCRIPTION
The device is manufactured using Diffused
Collector in Planar technology adopting "Enhance
High Voltage Structure" (EHVS1) developed to fit
High-Definition CRT displays.
The new HD product series show improved silicon
efficiency bringing updated performance to the
Horizontal Deflection stage.
Figure 1: Package
Figure 2: Internal Schematic Diagram
Table 1: Order Codes
ISOWATT218FX
Part Number Marking Package Packaging
HD1750FX HD1750FX ISOWATT218FX TUBE
HD1750FX
HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH
DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS
Rev. 2
HD1750FX
2/8
Table 2: Absolute Maximum Ratings
Table 3: Thermal Data
Table 4: Electrical Characteristics (T
case
= 25
o
C unless otherwise specified)
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %.
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
1700 V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
800 V
V
EBO
Emitter-Base Voltage (I
C
= 0)
10 V
I
C
Collector Current
24 A
I
CM
Collector Peak Current (t
p
< 5ms)
36 A
I
B
Base Current
12 A
I
BM
Base Peak Current (t
p
< 5ms)
18 A
P
tot
Total Dissipation at T
C
= 25
o
C
75 W
V
ins
Insulation Withstand Voltage (RMS) from All Three Leads to
External Heatsink
2500 V
T
stg
Storage Temperature
-65 to 150 °C
T
J
Max. Operating Junction Temperature
150 °C
R
thj-case
Thermal Resistance Junction-Case Max 1.67
o
C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
Collector Cut-off Current
(V
BE
= 0)
V
CE
= 1700 V
V
CE
= 1700 V T
C
= 125
o
C
0.2
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V 10 µA
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0 )
I
C
= 10 mA 800 V
V
EBO
Emitter-Base Voltage
(I
C
= 0 )
I
E
= 10 mA 10 V
V
CE(sat)
* Collector-Emitter
Saturation Voltage
I
C
= 12 A I
B
= 3 A 3 V
V
BE(sat)
* Base-Emitter Saturation
Voltage
I
C
= 12 A I
B
= 3 A 0.95 1.5 V
h
FE
DC Current Gain I
C
= 1 A V
CE
= 5 V
I
C
= 12 A V
CE
= 5 V
6.5
30
9.5
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 12 A f
h
= 31250 Hz
I
B(on)
= 1.9 A I
B(off)
= -8.1 A
V
CE(fly)
= 1320 V V
BE(off)
= -2.7 V
L
BB(off)
= 0.8 µH
3.1
350
3.8
500
µs
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 6.5 A f
h
= 100 kHz
I
B(on)
= 1.2 A I
B(off)
= -5.85 A
V
CE(fly)
= 1220 V V
BE(off)
= -2.7 V
L
BB(off)
= 0.25 µH
1.7
180
2
250
µs
ns
HD1750FX
3/8
Figure 3: Safe Operating Area
Figure 4: Output Chatacterisctics
Figure 5: DC Current Gain
Figure 6: Derating Curve
Figure 7: Reverse Biased SOA
Figure 8: DC Current Gain
P1-P3P4-P6P7-P8

HD1750FX

Mfr. #:
Buy HD1750FX
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN High Voltage +800Vceo Max.
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet