DMV1500SDFD6

December 2008 Rev 4 1/9
9
DMV1500SD
Damper + modulation diode for CRT TV
Features
Full kit in one package
High breakdown voltage capability
Very fast recovery diode
Specified turn on switching characteristics
Low static and peak forward voltage drop for
low dissipation
Insulated version:
Insulated voltage = 2000 V
RMS
Capacitance = 7 pF
Planar technology allowing high quality and
best electrical characteristics
Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600 V
technology as modulation
Description
High voltage semiconductor especially designed
for horizontal deflection stage in standard and
high resolution video display with E/W correction.
The insulated TO-220FPAB package includes
both the damper diode and the modulation diode,
thanks to a dedicated design.
Assembled on automated line, it offers very low
dispersion values on insulating and thermal
performanes.
Table 1. Device summary
Symbol Damper Modulation
I
F(AV)
6 A 6 A
I
Fpeak
(max) 12 A 12 A
V
RRM
1500 V 600 V
t
rr
(typ) 150 ns 60 ns
V
F
(typ) 1.1 V 1.0 V
V
FP
(typ) 26 V 5 V
TO-220FPAB
DMV1500SDFD
TO-220FPAB FD6 bending
DMV1500SDFD6 (optional)
Damper
123
Modulation
1
2
3
1
2
3
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Characteristics DMV1500SD
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1 Characteristics
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
Damper Modulation
V
RRM
Repetitive peak reverse voltage 1500 600 V
I
Fpeak
Peak working forward current F = 56 kHz 12 12 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 50 50 A
T
stg
Storage temperature range -40 to +150 °C
T
j
Maximum operating junction temperature 150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case thermal resistance 4.0 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions
Value
Unit
T
j
= 25 °C T
j
= 125 °C
Typ. Max. Typ. Max.
I
R
(1)
Reverse leakage current
Damper V
R
= 1500 V 100 100 1000
µA
Modulation
Modulation
V
R
= 600 V 3 3 30
V
F
(2)
Forward voltage drop
Damper I
F
= 6 A 1.2 1.75 1.1 1.5
V
Modulation I
F
= 6 A 1.15 1.4 1 1.25
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the maximum conduction losses of the damper and modulation diodes use the following equations :
Damper: P = 1.2 x I
F(AV)
+ 0.050 x I
F
2
(RMS)
Modulation: P = 0.89 x I
F(AV)
+ 0.055 x I
F
2
(RMS)
Table 5. Recovery characteristics
Symbol Parameter Test conditions
Value
Unit
Damper Modulation
Typ. Max. Typ. Max.
t
rr
Reverse recovery time
I
F
= 100 mA
I
R
=100 mA
I
RR
= 10 mA
T
j
= 25 °C 1000 2000 250 400
ns
I
F
= 1 A
dI
F
/dt = -50
A/µs V
R
= 30 V
T
j
= 25 °C 150 250 60 85
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DMV1500SD Characteristics
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Table 6. Turn-on switching characteristics
Symbol Parameter Test conditions
Value
Unit
Typ. Max.
t
fr
Forward recovery time
Damper
I
F
= 6 A
dI
F
/dt = 80 A/µs
V
FR
= 3 V
T
j
= 100 °C 350 500
ns
Modulation
I
F
= 6 A
dI
F
/dt = 80 A/µs
V
FR
= 2 V
T
j
= 100 °C 85 125
V
FP
Peak forward voltage
Damper
I
F
= 6 A
dI
F
/dt = 80 A/µs
T
j
= 100 °C 26 36
V
Modulation
I
F
= 6 A
dI
F
/dt = 80 A/µs
T
j
= 100 °C 5 7.5
Figure 1. Power dissipation vs. peak forward
current (triangular waveform,
δ = 0.45) (damper diode)
Figure 2. Power dissipation vs. peak forward
current (triangular waveform,
δ = 0.45) (modulation diode)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0123456789101112
P (W)
F(AV)
I (A)
P
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0123456789101112
P (W)
F(AV)
I (A)
P
Figure 3. Average forward current vs.
ambient temperature
Figure 4. Forward voltage drop vs. forward
current (damper diode)
0
1
2
3
4
5
6
7
0 25 50 75 100 125 150
I (A)
F(AV)
DAMPER diode
MODULATION diode
T
δ
=tp/T
tp
R=
th(j-a)
R
th(j-c)
T (°C)
amb
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
I (A)
FM
V (V)
FM
T =125°C
(typical values)
j
T =125°C
(maximum values)
j
T =25°C
(maximum values)
j

DMV1500SDFD6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers 6 Amp 1500 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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