DMV1500SDFD

Obsolete Product(s) - Obsolete Product(s)
Characteristics DMV1500SD
4/9
Figure 5. Forward voltage drop vs. forward
current (modulation diode)
Figure 6. Relative variation of thermal
impedance junction to case
versus pulse duration
0
1
2
3
4
5
6
7
8
9
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I (A)
FM
V (V)
FM
T =125°C
(typical values)
j
T =125°C
(maximum values)
j
T =25°C
(maximum values)
j
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Z/R
th(j-c) th(j-c)
t (s)
p
DAMPER diode
MODULATION diode
Single pulse
Figure 7. Reverse recovery charges vs.
dI
F
/dt (damper diode)
Figure 8. Reverse recovery charges vs.
dI
F
/dt (modulation diode)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1 1.0 10.0 100.0
Q (µC)
rr
dI /dt(A/µs)
F
I=
T =125°C
F
j
I
P
0
50
100
150
200
250
300
0.1 1.0 10.0 100.0
Q (nC)
rr
dI /dt(A/µs)
F
I=
T =125°C
F
j
I
P
Figure 9. Peak reverse recovery current vs.
dI
F
/dt (damper diode)
Figure 10. Peak reverse recovery current vs.
dI
F
/dt (modulation diode)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.1 1.0 10.0
I (A)
RM
dI /dt(A/µs)
F
I=
T =125°C
F
j
I
P
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1 1.0 10.0 100.0
I (A)
RM
dI /dt(A/µs)
F
I=
T =125°C
F
j
I
P
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DMV1500SD Characteristics
5/9
Figure 11. Transient peak forward voltage vs.
dI
F
/dt (damper diode, typical
values)
Figure 12. Transient peak forward voltage vs.
dI
F
/dt (modulation diode, typical
values)
0
5
10
15
20
25
30
35
40
45
50
0 20 40 60 80 100 120 140 160 180 200
V (V)
FP
dI /dt(A/µs)
F
I=
T =100°C
F
j
I
P
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
V (V)
FP
dI /dt(A/µs)
F
I=
T =100°C
F
j
I
P
Figure 13. Forward recovery time vs. dI
F
/dt
(damper diode, typical values)
Figure 14. Forward recovery time vs. dI
F
/dt
(modulation diode, typical values)
0
100
200
300
400
500
600
700
800
0 20 40 60 80 100 120 140 160 180 200
t (ns)
fr
I=
T =100°C
V
F
j
I
=3V
P
FR
dI /dt(A/µs)
F
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160 180 200
t (ns)
fr
I=
T =100°C
V
F
j
I
=2V
P
FR
dI /dt(A/µs)
F
Figure 15. Relative variation of dynamic
parameters vs. junction
temperature
Figure 16. Junction capacitance vs. reverse
voltage applied (typical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
25 50 75 100 125
Q
RR
T (°C)
j
V
FP
I
RM
I,V,Q [T]/
RM FP RR j
I , V , Q [T =125°C]
RM FP RR j
1
10
100
1 10 100 1000
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
DAMPER diode
MODULATION diode
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Package information DMV1500SD
6/9
2 Package information
Epoxy meets UL94,V0
Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in ECOPACK
®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com
Table 7. TO-220FPAB dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.50 0.045 0.059
F2 1.15 1.50 0.045 0.059
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
H
A
B
Dia
L7
L6
L5
F1
F2
F
D
E
L4
G1
G
L2
L3

DMV1500SDFD

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
RF DIODE STANDAR 1500V TO220FPAB
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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