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BYV28-200-TAP

P1-P3P4-P4
BYV28-50, BYV28-100, BYV28-150, BYV28-200
www.vishay.com
Vishay Semiconductors
Rev. 1.9. 02-May-16
1
Document Number: 86044
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultra-Fast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Very fast rectification e.g. for switch mode power supply
949588
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYV28-200 BYV28-200-TR 2500 per 10" tape and reel 12 500
BYV28-200 BYV28-200-TAP 2500 per ammopack 12 500
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYV28-50 V
R
= 50 V; I
F(AV)
= 3.5 A SOD-64
BYV28-100 V
R
= 100 V; I
F(AV)
= 3.5 A SOD-64
BYV28-150 V
R
= 150 V; I
F(AV)
= 3.5 A SOD-64
BYV28-200 V
R
= 200 V; I
F(AV)
= 3.5 A SOD-64
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYV28-50 V
R
= V
RRM
50 V
BYV28-100 V
R
= V
RRM
100 V
BYV28-150 V
R
= V
RRM
150 V
BYV28-200 V
R
= V
RRM
200 V
Peak reverse voltage, non repetitive See electrical characteristics
BYV28-50 V
RSM
55 V
BYV28-100 V
RSM
110 V
BYV28-150 V
RSM
165 V
BYV28-200 V
RSM
220 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
90 A
Repetitive peak forward current I
FRM
25 A
Average forward current I
F(AV)
3.5 A
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
I
(BR)R
= 1 A, Tj = 175 °C E
R
20 mJ
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
L
= constant R
thJA
25 K/W
On PC board with spacing 25 mm R
thJA
70 K/W
BYV28-50, BYV28-100, BYV28-150, BYV28-200
www.vishay.com
Vishay Semiconductors
Rev. 1.9. 02-May-16
2
Document Number: 86044
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 5 A V
F
--1.1V
I
F
= 5 A, T
j
= 175 °C V
F
- - 0.89 V
Reverse current
V
R
= V
RRM
I
R
--1μA
V
RSM
I
R
- - 100 μA
V
R
= V
RRM
, T
j
= 165 °C I
R
- - 150 μA
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
- - 30 ns
0
10
20
30
40
151050 202530
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949548
ll
T
L
= constant
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
100
0.0 0.4 0.8 1.2 1.6 2.0
V
F
- Forward Voltage (V)
16453
T
j
= 175 °C
T
j
= 25 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 20 40 60 80 100 120 140 160 180
T
amb
- Ambient Temperature (°C)
16454
I
FAV
- Average Forward Current (A)
V
R
= V
RRM
half sine wave
R
thJA
≤ 25 K/W
l = 10 mm
R
thJA
≤ 70 K/W
PCB: d = 25 mm
1
10
100
1000
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16455
V
R
= V
RRM
I
R
- Reverse Current (A)
BYV28-50, BYV28-100, BYV28-150, BYV28-200
www.vishay.com
Vishay Semiconductors
Rev. 1.9. 02-May-16
3
Document Number: 86044
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
0
10
20
30
40
50
60
25 50 75 100 125 150 175
16456
V
R
= V
RRM
P
R
- Reverse Power Dissipation (mW)
P
R
- Limit
at 100 % V
R
T
j
- Junction Temperature (°C)
P
R
- Limit
at 80 % V
R
0
50
100
150
200
250
0.1 1 10 100
V
R
- Reverse Voltage (V)
16457
C
D
- Diode Capacitance (pF)
f = 1 MHz
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
4 (0.156) max.
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
P1-P3P4-P4

BYV28-200-TAP

Mfr. #:
Buy BYV28-200-TAP
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 3.5 Amp 200 Volt 90 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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