ZXMN2088DE6
Document Number DS33572 Rev. 3 - 3
4 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ADVANCE INFO R MA T I O N
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V
(BR)DSS
20
V
I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
100 nA
V
DS
= 3V, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
1 µA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
±100
nA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
0.4
1.0 V
I
D
= 250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 10)
R
DS(ON)
0.112 0.200
Ω
V
GS
= 4.5V, I
D
= 1.0A
0.137 0.240
V
GS
= 2.5V, I
D
= 0.6A
0.165 0.310
V
GS
= 1.8V, I
D
= 0.3A
Forward Transconductance (Notes 10 & 12)
g
fs
4.6
S
V
DS
= 10V, I
D
= 1.0A
Diode Forward Voltage (Note 12)
V
SD
0.75 0.95 V
I
S
= 1.0A, V
GS
= 0V, T
J
= +25°C
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
C
iss
279
pF
V
DS
= 10V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
52
pF
Reverse Transfer Capacitance
C
rss
29
pF
Total Gate Charge
Q
g
3.8
nC
V
GS
= 4.5V
V
DS
= 10V
I
D
= 2.4A
Gate-Source Charge
Q
gs
0.41
nC
Gate-Drain Charge
Q
gd
0.56
nC
Turn-On Delay Time (Note 11)
t
D(on)
2.0
ns
V
DD
= 10V, V
GS
= 4.5V
I
D
= 1.0A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 11)
t
r
3.2
ns
Turn-Off Delay Time (Note 11)
t
D(off)
12.7
ns
Turn-Off Fall Time (Note 11)
t
f
6.2
ns
Reverse Recovery Time
t
rr
6.6
ns
I
F
= 1.24A, di/dt = 100A/µs,
T
J
= +25°C
Reverse Recovery Charge
Q
rr
1.6
nC
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing.
