AO4813
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage
-1.5 -2.0 -2.5 V
I
D(ON)
-40 A
17 25
T
J
=125°C 24 33
27 40 mΩ
g
FS
24 S
V
SD
-0.75 -1 V
I
S
-2.5 A
C
iss
1040 1250 pF
C
oss
180 pF
C
rss
125 175 pF
R
g
2 4 6 Ω
Q
g
(10V) 19 nC
Q
g
(4.5V) 9.6 nC
Q
gs
3.6 nC
Q
gd
4.6 nC
t
D(on)
10 ns
t
r
5.5 ns
t
D(off)
26 ns
t
f
9 ns
t
rr
11.5 ns
Q
rr
25
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=-7.1A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=2.2Ω,
R
GEN
=3Ω
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Reverse Transfer Capacitance
Turn-Off Fall Time
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-7.1A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
On state drain current
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-7.1A
V
GS
=-4.5V, I
D
=-5.6A
Forward Transconductance
Diode Forward Voltage
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-7.1A
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS
I
D
=-250µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
I
F
=-7.1A, dI/dt=500A/µs
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
I
D
=-250µA, V
GS
=0V
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
Rev 9: April 2011 www.aosmd.com Page 2 of 6
