VS-80SQ... Series, VS-80SQ...-M3 Series
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Vishay Semiconductors
Revision: 19-Sep-11
1
Document Number: 93398
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Schottky Rectifier, 8 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-80SQ... axial leaded Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package DO-204AR
I
F(AV)
8 A
V
R
30 V, 35 V, 40 V, 45 V
V
F
at I
F
0.44 V
I
RM
max. 15 mA at 125 °C
T
J
max. 175 °C
Diode variation Single die
E
AS
10 mJ
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 8A
V
RRM
Range 30 to 45 V
I
FSM
t
p
= 5 μs sine 2400 A
V
F
8 Apk, T
J
= 125 °C 0.44 V
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-80SQ030
VS-80SQ030-M3
VS-80SQ035
VS-80SQ035-M3
VS-80SQ040
VS-80SQ040-M3
VS-80SQ045
VS-80SQ045-M3
UNITS
Maximum DC reverse voltage V
R
30 35 40 45 V
Maximum working peak reverse
voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 119 °C, rectangular waveform 8
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
2400
10 ms sine or 6 ms rect. pulse 380
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.6 A, L = 7.8 mH 10 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by, T
J
maximum V
A
= 1.5 x V
R
typical
1.6 A
