Jantxv2N3421

2N3418, S 2N3419, S
Ratings Symbol 2N3420, S 2N3421, S Units
Collector - Emitter Voltage V
CEO
60 80 Vdc
Collector - Base Voltage V
CBO
85 125 Vdc
Emitter - Base Voltage V
EBO
8.0 Vdc
Collector Current I
C
3.0 Adc
T
P
1.0 ms, duty cycle 50% 5.0
Total Power Dissipation @ T
A
= +25 °C P
T
1.0 W
@ T
C
= +100 °C
10.0 W
Operating & Storage Temperature Range T
op
, T
stg
-65 to +200 °C
Revision Date: 2/26/2013
New Product
1
NPN Meduim Power Silicon Transistor
2N3418, 2N3419, 2N3420 & 2N3421
2N3418S, 2N3419S, 2N3420S & 2N3421S
Maximum Ratings
Features
Available in JAN, JANTX and JANTXV
per MIL-PRF-19500/393
TO-5, TO-39 (TO-205AD) Package
Electrical Characteristics
OFF Characteristics Symbol Mimimum Maximum Units
Collector - Emitter Breakdown Voltage
I
C
= 50 mAdc 2N3418, S, 2N3420, S V
(BR)CEO
60 - - - Vdc
2N3419, S, 2N3421, S 80
Collector - Emitter Cutoff Current
V
CE
= 80 Vdc, V
BE
= -0.5 Vdc 2N3418, S, 2N3420, S I
CEX
- - - 0.3 μAdc
V
CE
= 120 Vdc, V
BE
= -0.5 Vdc 2N3419, S, 2N3421, S 0.3
Collector - Emitter Cutoff Current
V
CE
= 45 Vdc 2N3418, S, 2N3420, S I
CEO
- - - 5.0 μAdc
V
CE
= 60 Vdc 2N3419, S, 2N3421, S 5.0
Emitter - Base Cutoff Current
V
EB
= 6.0 Vdc, I
C
= 0 I
EBO
- - - 0.5 μAdc
V
EB
= 8.0 Vdc, I
C
= 0 10.0
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Revision Date: 2/26/2013
2
Electrical Characteristics -con’t
ON Characteristics
(1)
Symbol Minimum Maximum Unit
Forward Current Transfer Ratio
I
C
= 100 mAdc, V
CE
= 2.0 Vdc 2N3418, S, 2N3419, S 20
2N3420, S, 2N3421, S 40
I
C
= 1.0 Adc, V
CE
= 2.0 Vdc 2N3418, S, 2N3419, S 20 60
2N3420, S, 2N3421, S H
FE
40 120
I
C
= 2.0 Adc, V
CE
= 2.0 Vdc 2N3418, S, 2N3419, S 15
2N3420, S, 2N3421, S 30
I
C
= 5.0 Adc, V
CE
= 5.0 Vdc 2N3418, S, 2N3419, S 10
2N3420, S, 2N3421, S 15
Base - Emitter Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc V
BE(sat)
0.6 1.2 Vdc
I
C
= 52.0 Adc, I
B
= 0.2 Adc 0.7 1.4
Collector - Emitter Saturation Voltage
I
C
= 250 mAdc, I
B
= 25 mAdc V
CE(on)
- - - 0.25 Vdc
I
C
= 500 mAdc, I
B
= 50 mAdc - - - 0.5
DYNAMIC Characteristics
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 0.1 Adc, V
CE
= 10.0 Vdc, f = 20 MHz | h
fe
| 1.3 8.0
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz f 1.0 MHz C
obo
- - - 150 pF
Switching Characteristics
Delay Time V
BE(off)
= -3.7 Vdc t
d
- - - 0.08 μs
Rise Time I
C
= 1.0 Adc, I
B2
= 100 mAdc t
r
- - - 0.22 μs
Storage Time V
BE(off)
= -3.7 Vdc t
s
- - - 1.10 μs
Fall Time I
C
= 1.0 Adc, I
B2
= -100 mAdc t
f
- - - 0.20 μs
SAFE OPERATING AREA
DC Tests: T
C
= 100 °C, 1 Cycle, t = 1.0 s s
Test 1: V
CE
= 5.0 Vdc, I
C
= 3.0 Adc
Test 2: V
CE
= 37 Vdc, I
C
= 0.4 Adc
Test 3: V
CE
= 60 Vdc, I
C
= 0.185 mAdc 2N3418, S; 2N3420, S
V
CE
= 80 Vdc, I
C
= 0.12 mAdc 2N3419, S; 2N3421, S
2N3418, S, 2N3420, S &
2N3419, S, 2N3421, S
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Revision Date: 2/26/2013
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2N3418, S, 2N3420, S &
2N3419, S, 2N3421, S
Outline Drawing
NOTE: Dimensions in Inches [mm]

Jantxv2N3421

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Bipolar Transistors - BJT Power BJT
Lifecycle:
New from this manufacturer.
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