NDF0610

NDS0610.SAM
-50 -25 0 25 50 75 100 125 150
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I = -10µA
D
BV , NORMALIZED
DSS
J
0.6 0.8 1 1.2 1.4 1.6 1.8
0.1
0.2
0.3
0.5
1
1.5
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125°C
J
25
-55
SD
S
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-10
-8
-6
-4
-2
0
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
-48
V = -12V
DS
I = -0.5A
D
-24
0.1 0.2 0.5 1 2 5 10 20 30 60
2
3
5
10
20
30
50
70
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
-1.4-1.2-1-0.8-0.6-0.4-0.20
0
0.1
0.2
0.3
0.4
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55°C
J
25
D
FS
V = -10V
DS
125
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. Transconductance Variation with Drain
Current and Temperature
Typical Electrical Characteristics (continued)
NDS0610.SAM
1 2 5 10 20 30 60 80
0.005
0.01
0.05
0.1
0.5
1
2
3
- V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
DS
D
V = -10V
SINGLE PULSE
T = 25°C
GS
A
RDS(ON) Limit
100ms
1ms
10ms
DC
1s
100us
10s
1 2 5 10 20 30 60 80
0.005
0.01
0.05
0.1
0.5
1
2
3
- V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
DS
D
V = -10V
SINGLE PULSE
T = 25°C
GS
A
RDS(ON) Limit
100ms
1ms
10ms
DC
1s
100us
10s
Figure 12. NDF0610 (TO-92)
Maximum Safe Operating Area
Figure 13. NDS0610 (SOT-23) Maximum Safe
Operating Area
Typical Electrical Characteristics (continued)
0.0001 0.001 0.01 0.1 1 10 100 300
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = 200 C/W
Datasheet)
θJAθJA
θ
JA
T - T = P * R (t)
θ
JA
A
J
P(pk)
t
1
t
2
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
o
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.01
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = 350 C/W
θJAθJA
θ
JA
T - T = P * R (t)
θ
JA
A
J
P(pk)
t
1
t
2
o
Figure 14. NDF0610 (TO-92) Transient Thermal
Response Curve.
Figure 15. NDS0610 (SOT-23) Transient Thermal
Response Curve.

NDF0610

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 60V 180MA TO92
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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