NDS0610.SAM
-50 -25 0 25 50 75 100 125 150
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I = -10µA
D
BV , NORMALIZED
DSS
J
0.6 0.8 1 1.2 1.4 1.6 1.8
0.1
0.2
0.3
0.5
1
1.5
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125°C
J
25
-55
SD
S
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-10
-8
-6
-4
-2
0
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
-48
V = -12V
DS
I = -0.5A
D
-24
0.1 0.2 0.5 1 2 5 10 20 30 60
2
3
5
10
20
30
50
70
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
-1.4-1.2-1-0.8-0.6-0.4-0.20
0
0.1
0.2
0.3
0.4
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55°C
J
25
D
FS
V = -10V
DS
125
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. Transconductance Variation with Drain
Current and Temperature
Typical Electrical Characteristics (continued)