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SS12P4S-M3/87A

P1-P3P4-P5
SS12P4S
www.vishay.com
Vishay General Semiconductor
Revision: 17-Jan-14
1
Document Number: 89127
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMD Photovoltaic Solar Cell Protection Schottky Rectifier
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Notes
(1)
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink
(2)
Free air, mounted on recommended copper pad area
(3)
Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
I
F(AV)
12 A
V
RRM
40 V
I
FSM
280 A
E
AS
20 mJ
V
F
at I
F
= 12 A 0.43 V
T
J
max. 150 °C
Package TO-277A (SMPC)
Diode variations Single die
K
2
1
TO-277A (SMPC)
eSMP
®
Series
Anode 1
Anode 2Cathode
K
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS12P4S UNIT
Device marking code 124S
Maximum repetitive peak reverse voltage V
RRM
40 V
Maximum DC forward current (fig. 1) I
F
12
(1)
4.4
(2)
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
280 A
Non-repetitive avalanche energy at I
AS
= 2.0 A, T
J
= 25 °C E
AS
20 mJ
Operating junction and storage temperature range T
OP
, T
STG
-55 to +150 °C
Junction temperature in DC forward current without reverse bias, t 1 h
(3)
T
J
200 °C
SS12P4S
www.vishay.com
Vishay General Semiconductor
Revision: 17-Jan-14
2
Document Number: 89127
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Notes
(1)
Free air, mounted on recommended copper pad area. Thermal resistance R
JA
- junction to ambient.
(2)
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink. Thermal resistance R
JM
- junction to mount.
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Current Derating Curve
Notes
(1)
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x
100 mm fin heat sink, T
M
measured at the terminal of cathode
band
(2)
Mounted on 30 mm x 30 mm Al PCB (R
JA
= 20 °C/W)
(3)
Mounted on 30 mm x 30 mm x 2 copper pad areas FR4 PCB
(R
JA
= 30 °C/W)
(4)
Mounted on 25 mm x 25 mm x 2 copper pad areas FR4 PCB
(R
JA
= 30 °C/W)
(5)
Free air, mounted on recommended copper pad area
(R
JA
= 100 °C/W)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 6 A
T
A
= 25 °C
V
F
(1)
0.43 -
V
I
F
= 12 A 0.50 0.60
I
F
= 6 A
T
A
= 125 °C
0.33 -
I
F
= 12 A 0.43 0.52
Reverse current V
R
= 40 V
T
A
= 25 °C
I
R
(2)
100 800 μA
T
A
= 125 °C 50 100 mA
Typical junction capacitance 4.0 V, 1 MHz C
J
750 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance
R
JA
(1)
100
°C/W
R
JM
(2)
3
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SS12P4S-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
SS12P4S-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
10
12
14
8
6
4
2
0
0 25 50 75 125 150
DC Forward Curr
ent (A)
Ambient Temperature (°C)
100
T
M
= 100 °C
(1)
T
A
= 25 °C
(2)
(5)
T
A
= 25 °C
(3)
T
A
= 25 °C
(4)
SS12P4S
www.vishay.com
Vishay General Semiconductor
Revision: 17-Jan-14
3
Document Number: 89127
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
0
1
2
3
4
5
6
7
02468101214
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
Average Power Loss (W)
D = t
p
/T t
p
T
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.7
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.6
0.001
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 125 °C
T
A
= 25 °C
0.01
T
A
= 150 °C
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
P1-P3P4-P5

SS12P4S-M3/87A

Mfr. #:
Buy SS12P4S-M3/87A
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 12 Amp 40 Volt 280 Amp IFSM
Lifecycle:
New from this manufacturer.
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