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BAS28E6327HTSA1

P1-P3P4-P6P7-P7
2007-04-19
1
BAS28...
Silicon Switching Diode
• For high-speed switching applications
• Electrical insulated diodes
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
BAS28/W
,
!"
,
Type Package Configuration Marking
BAS28
BAS28W
SOT143
SOT343
parallel pair
parallel pair
JTs
JTs
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
80 V
Peak reverse voltage V
RM
85
Forward current I
F
200 mA
Peak forward current I
FM
-
Surge forward current, t = 1 µs I
FS
4.5 A
Non-repetitive peak surge forward current I
FSM
-
Total power dissipation
BAS28, T
S
≤ 31°C
BAS28W, T
S
≤ 103°C
P
tot
330
250
mW
Junction temperature T
j
150 °C
Storage temperature T
st
g
-55 ... 150
1
Pb-containing package may be available upon special request
2007-04-19
2
BAS28...
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
BAS28
BAS28W
R
thJS
≤ 360
≤ 190
K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
85 - - V
Reverse current
V
R
= 75 V
V
R
= 25 V, T
A
= 150 °C
V
R
= 75 V, T
A
= 150 °C
I
R
-
-
-
-
-
-
0.1
30
50
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
mV
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
- - 2 pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R
= 1mA ,
R
L
= 100 Ω
t
rr
- - 4 ns
Test circuit for reverse recovery time
EHN00019
Ι
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 100ns, D = 0.05,
t
r
= 0.6ns, R
i
= 50Ω
Oscillograph: R = 50Ω, t
r
= 0.35ns,
C ≤ 1pF
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-04-19
3
BAS28...
Reverse current I
R
= ƒ (T
A
)
V
R
= Parameter
0 25 50 75 100
°C
150
T
A
1
10
2
10
3
10
4
10
5
10
nA
I
R
70 V
25 V
Forward Voltage V
F
= ƒ (T
A
)
I
F
= Parameter
0
0.5
1.0
0 50 100 150
BAS 28 EHB00037
V
T
A
V
F
C
Ι
F
= 100 mA
10 mA
1 mA
0.1 mA
Forward current I
F
= ƒ (V
F
)
T
A
= 25 °C
0
0
EHB00035BAS 28
Ι
0.5 1.0 V 1.5
50
100
mA
150
F
F
V
maxtyp
Peak forward current I
FM
= ƒ (t
p
)
T
A
= 25 °C
BAS28
EHB00036
-6
10
BAS 28
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
-2
10
-1
10
Ι
FM
10
0
10
1
10
A
2
t
T
t
p
D
p
=
T
t
D = 0.005
0.01
0.02
0.05
0.1
0.2
P1-P3P4-P6P7-P7

BAS28E6327HTSA1

Mfr. #:
Buy BAS28E6327HTSA1
Manufacturer:
Infineon Technologies
Description:
Diodes - General Purpose, Power, Switching Silicon Switching Diode 200mA
Lifecycle:
New from this manufacturer.
Delivery:
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