CY7C1069GN30-10ZSXIT

Document Number: 002-00046 Rev. *B Page 4 of 15
CY7C1069GN
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Ambient temperature
with power applied ................................... –55 C to +125 C
Supply voltage
on V
CC
relative to GND
[2]
.................. –0.5 V to V
CC
+ 0.5 V
DC voltage applied to outputs
in High Z state
[2]
................................ –0.5 V to V
CC
+ 0.5 V
DC input voltage
[2]
............................. –0.5 V to V
CC
+ 0.5 V
Current into outputs (LOW) ........................................ 20 mA
Static discharge voltage
(MIL-STD-883, method 3015) ................................. > 2001 V
Latch-up current .................................................... > 140 mA
Operating Range
Range Ambient Temperature V
CC
Industrial –40 C to +85 C 3.3 V 0.3 V
DC Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
-10ns
Unit
Min Typ
[3]
Max
V
OH
Output HIGH
voltage
2.2 V to 2.7 V Min V
CC
, I
OH
= –1.0 mA 2.0 V
2.7 V to 3.0 V Min V
CC
, I
OH
= –4.0 mA 2.2
3.0 V to 3.6 V Min V
CC
, I
OH
= –4.0 mA 2.4
V
OL
Output LOW
voltage
2.2 V to 2.7 V Min V
CC
, I
OL
= 2.0 mA 0.4 V
2.7 V to 3.6 V Min V
CC
, I
OL
= 8.0 mA 0.4
V
IH
Input HIGH
voltage
2.2 V to 2.7 V 2.0 V
CC
+ 0.3 V
2.7 V to 3.6 V 2.0 V
CC
+ 0.3
V
IL
Input LOW
voltage
[2]
2.2 V to 2.7 V –0.3 0.6 V
2.7 V to 3.6 V –0.3 0.8
I
IX
Input leakage current GND < V
IN
< V
CC
–1 +1 A
I
OZ
Output leakage current GND < V
OUT
< V
CC
, Output disabled –1 +1 A
I
CC
V
CC
operating supply current V
CC
= Max, f = f
MAX
= 1/t
RC
,
I
OUT
= 0 mA, CMOS levels
–90110mA
I
SB1
Automatic CE power-down
current – TTL inputs
Max V
CC
, CE
1
> V
IH
,
CE
2
< V
IL
,
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
––40mA
I
SB2
Automatic CE power-down
current – CMOS inputs
Max V
CC
,
CE
1
> V
CC
– 0.3 V, CE
2
< 0.3 V,
V
IN
> V
CC
– 0.3 V or V
IN
< 0.3 V, f = 0
–2030mA
Notes
2. V
IL(min)
= –2.0 V and V
IH(max)
= V
CC
+ 2 V for pulse durations of less than 20 ns.
3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC = 3 V (for VCC range of 2.2 V–3.6 V)
Document Number: 002-00046 Rev. *B Page 5 of 15
CY7C1069GN
Capacitance
Parameter
[4]
Description Test Conditions TSOP II VFBGA Unit
C
IN
Input capacitance T
A
= 25 C, f = 1 MHz, V
CC
= 3.3 V 10 10 pF
C
OUT
IO capacitance 10 10 pF
Thermal Resistance
Parameter
[4]
Description Test Conditions TSOP II VFBGA Unit
JA
Thermal resistance
(junction to ambient)
Still air, soldered on a 3 × 4.5 inch, four
layer printed circuit board
93.63 31.50 C/W
JC
Thermal resistance
(junction to case)
21.58 15.75 C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
[5]
90%
10%
3.0 V
GND
90%
10%
ALL INPUT PULSES
3.3 V
OUTPUT
5 pF*
INCLUDING
JIG AND
SCOPE
(b)
R1 317
R2
351
Rise Time > 1 V/ns
Fall Time:
> 1 V/ns
(c)
OUTPUT
50
Z
0
= 50
V
TH
= 1.5 V
30 pF*
* Capacitive load consists
of all components of the
test environment
High Z characteristics
(a)
Notes
4. Tested initially and after any design or process changes that may affect these parameters.
5. Full device AC operation assumes a 100-μs ramp time from 0 to V
CC(min)
and 100-μs wait time after V
CC
stabilization.
Document Number: 002-00046 Rev. *B Page 6 of 15
CY7C1069GN
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions Min Max Unit
V
DR
V
CC
for data retention 1.0 V
I
CCDR
Data retention current V
CC
= V
DR
, CE
1
> V
CC
– 0.2 V, CE
2
< 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V
30 mA
t
CDR
[6]
Chip deselect to data retention
time
–0ns
t
R
[7]
Operation recovery time 10 ns
Data Retention Waveform
Figure 4. Data Retention Waveform
3.0 V3.0 V
t
CDR
V
DR
> 1 V
DATA RETENTION MODE
t
R
CE
V
CC
Notes
6. Tested initially and after any design or process changes that may affect these parameters.
7. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 100 μs or stable at V
CC(min.)
> 100 μs.

CY7C1069GN30-10ZSXIT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM Async SRAMS
Lifecycle:
New from this manufacturer.
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